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IL4208 데이터시트(PDF) 3 Page - Vishay Siliconix

부품명 IL4208
상세설명  Optocoupler, Phototriac Output, High dV/dt, Low Input Current
PDF  7 Pages
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제조업체  VISHAY [Vishay Siliconix]
홈페이지  http://www.vishay.com
Logo VISHAY - Vishay Siliconix

IL4208 데이터시트(HTML) 3 Page - Vishay Siliconix

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Document Number: 83629
For technical questions, contact: optocoupleranswers@vishay.com
www.vishay.com
Rev. 2.0, 29-Mar-11
3
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
IL420, IL4208
Optocoupler, Phototriac Output,
High dV/dt, Low Input Current
Vishay Semiconductors
Note
• Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering
evaluation. Typical values are for information only and are not part of the testing requirements.
ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
PART
SYMBOL
MIN.
TYP.
MAX.
UNIT
INPUT
Forward voltage
IF = 10 mA
VF
1.16
1.35
V
Reverse current
VR = 6 V
IR
0.1
10
μA
Input capacitance
VF = 0 V, f = 1 MHz
CIN
40
pF
Thermal resistance, junction to ambient
Rthja
750
°C/W
OUTPUT
Off-state current
VD = VDRM, Tamb = 100 °C
IDRM
10
100
μA
On-state voltage
IT = 300 mA
VTM
1.7
3
V
Surge (non-repetitive), on-state current
f = 50 Hz
ITSM
3A
Holding current
IH
65
500
μA
Latching current
VT = 2.2 V
IL
500
μA
LED trigger current
VD = 5 V
IFT
12
mA
Trigger current temperature gradient
I
FT/Tj
714
μA/°C
Critical rate of rise off-state voltage
VD = 0.67 VDRM, Tj = 25 °C
dV/dtcr
10 000
V/μs
VD = 0.67 VDRM, Tj = 80 °C
dV/dtcr
5000
V/μs
Critical rate of rise of voltage at current
commutation
VD = 230 VRMS,
ID = 300 mARMS, TJ = 25 °C
dV/dtcrq
8V/μs
VD = 230 VRMS,
ID = 300 mARMS, TJ = 85 °C
dV/dtcrq
7V/μs
Critical rate of rise of on-state current
commutation
dI/dtcrq
12
A/ms
Thermal resistance, junction to ambient
Rthja
150
°C/W
COUPLER
Critical rate of rise of coupled
input/output voltage
IT = 0 A, VRM = VDM = VDRM
dV/dt
5000
V/μs
Capacitance (input to output)
f = 1 MHz, VIO = 0 V
CIO
0.8
pF
Isolation resistance
VIO = 500 V, Tamb = 25 °C
RIO
 1012
VIO = 500 V, Tamb = 100 °C
RIO
 1011
SWITCHING CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
SYMBOL
MIN.
TYP.
MAX.
UNIT
Turn-on time
VRM = VDM = VDRM
ton
35
μs



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