MGSF3442VT1

3

Motorola Small–Signal Transistors, FETs and Diodes Device Data

TYPICAL ELECTRICAL CHARACTERISTICS

Figure 1. Output Characteristics

Figure 2. Transfer Characteristics

Figure 3. On–Resistance versus Drain Current

Figure 4. Capacitance

Figure 5. Gate Charge

Figure 6. On–Resistance versus Junction

Temperature

3.0

0

VDS, DRAIN–TO–SOURCE VOLTAGE (V)

20

16

8.0

12

VGS, GATE–TO–SOURCE VOLTAGE (V)

0

8.0

4.0

0

0

ID, DRAIN CURRENT (A)

0.14

0.12

0.10

0.08

0.06

0

VDS, DRAIN–TO–SOURCE VOLTAGE (V)

4.0

0

1200

1000

800

600

0

8.0

20

4.0

0

Qg, TOTAL GATE CHARGE (nC)

5.0

3.0

2.0

1.0

0

TJ, JUNCTION TEMPERATURE (°C)

–25

100

–50

1.8

1.6

1.2

1.0

0.8

0.6

50

2.0

4.0

0

1.0

2.0

4.0

5.0

1.0

2.0

2.5

3.0

12

16

20

4.0

8.0

12

16

12

16

20

6.0

8.0

4.0

0

25

125

150

75

400

200

1.4

VGS = 4.5 V

4.0 V

3.5 V

3.0 V

1.5 V

2.0 V

VGS = 2.5 V

VGS = 4.5 V

VDS = 10 V

ID = 4.0 A

VGS = 4.5 V

ID = 4.0 A

Ciss

Coss

Crss

TC = –55°C

125

°C

25

°C

0.04

0.02

1.5

0.5

2.5 V