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STN4438 데이터시트(PDF) 3 Page - Stanson Technology |
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STN4438 데이터시트(HTML) 3 Page - Stanson Technology |
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3 / 6 page ![]() STN4438 N Channel Enhancement Mode MOSFET 8.2A STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA www.stansontech.com Copyright © 2008, Stanson Corp. STN4438 2009. V1 ELECTRICAL CHARACTERISTICS ( Ta = 25℃ Unless otherwise noted ) Parameter Symbol Condition Min Typ Max Unit Static Drain-Source Breakdown Voltage V(BR)DSS VGS=0V,ID=250uA 60 V Gate Threshold Voltage VGS(th) VDS=VGS,ID=250uA 1.0 3.0 V Gate Leakage Current IGSS VDS=0V,VGS=±20V ±100 nA VDS=48V,VGS=0V 1 Zero Gate Voltage Drain Current IDSS VDS=48V,VGS=0V TJ=5℃ 5 uA On-State Drain Current ID(on) VDS≧5V,VGS=10V 40 A Drain-source On- Resistance RDS(on) VGS=10V,ID=10A VGS=4.5V,ID=8A 25 30 30 35 mΩ Forward Transconductance gfs VDS=5V,ID=6.2AV 24 S Diode Forward Voltage VSD IS=1A,VGS=0V 0.8 1.2 V Dynamic Total Gate Charge Qg 48 58 Gate-Source Charge Qgs 24.2 30 Gate-Drain Charge Qgd VDS=30V,VGS=10V ID≡8.2A 14.5 nC Input Capacitance Ciss 1920 Output Capacitance Coss 155 Reverse TransferCapacitance Crss VDS ==30V,VGS=0V F=1MHz 116 pF 8.5 Turn-On Time td(on) tr 6 29 Turn-Off Time td(off) tf VDS=30V,RL=3.6Ω VGEN=3V 6 nS PDF created with pdfFactory Pro trial version www.pdffactory.com |
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