BAP70AM datasheet(30/130 Pages) NXP

30 / 130 page

NXP Semiconductors RF Manual 16th edition

1.5 Automotive

1.5.1 SDARS & HD radio

Application diagram

Recommended products

Function

Product

Package

Type

1st stage

LNA

MMIC

Low-noise wideband

amplifier

SOT343F

BFU730F

Function

Product

Package

Type

2nd stage

LNA

MMIC

General-purpose

wideband amplifier

SOT343F

BFU690F

SOT363

BGA2869

BGA2851

BGA2803

Function

Product

Package

Type

3rd stage

LNA

RF transistor

SiGe:C transistor

SOT343F

BFU690F

BFU725F/N1

BFU790F

Product highlight:

BFU730F NPN wideband silicon germanium RF transistor

The BGU730F is part of the family of 6th (Si) and 7th (SiGe:C)

generation RF transistors and can be used to perform nearly any RF

function. These next-generation wideband transistors offer the best

RF noise figure versus gain performance, drawing the lowest current.

This performance allows for better signal reception at low power and

enables RF receivers to operate more robustly in noisy environments.

Features

At 2.3 GHz

` High maximum power gain (Gp) of 17.6 dB

` Noise figure (NF) of 0.8 dB

` Input 1dB gain compression (Pi(1dB) ) of -15 dBm

` Input third order intercept point IP3

I of +4.7 dBm

001aan958

1st

stage

LNA

antenna

2nd

stage

LNA

3rd

stage

LNA

filter

CHIPSET

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