MBRA210ET3 datasheet(1/3 Pages) TAYCHIPST

부품명	MBRA210ET3

상세설명	Surface Mount Schottky Power Rectifier

PDF	3 Pages

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제조업체	TAYCHIPST [Shenzhen Taychipst Electronic Co., Ltd]

홈페이지	http://www.taychipst.com

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10V

2.0A

MBRA210ET3

1 of 3

Web Site: www.taychipst.com

FEATURES

E-mail: sales@taychipst.com

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

MECHANICAL DATA

• Low IR, Extends Battery Life

• 1st in the Market Place with a 10 VR Schottky Rectifier

• Compact Package with J−Bend Leads Ideal for Automated Handling

• Highly Stable Oxide Passivated Junction

• Guardring for Over−Voltage Protection

• Optimized for Low Leakage Current

• Pb−Free Package is Available

• Case: Molded Epoxy

• Epoxy Meets UL 94 V−0 @ 0.125 in

• Weight: 70 mg (Approximately)

• Finish: All External Surfaces Corrosion Resistant and Terminal

Leads are Readily Solderable

• Lead and Mounting Surface Temperature for Soldering Purposes:

260

°C Max. for 10 Seconds

• Polarity: Polarity Band Indicates Cathode Lead

MAXIMUM RATINGS

Rating

Symbol

Value

Unit

Peak Repetitive Reverse Voltage

Working Peak Reverse Voltage

DC Blocking Voltage

VRRM

VRWM

VR

10

V

Average Rectified Forward Current

(At Rated VR, TC = 125°C)

IO

2.0

A

Non−Repetitive Peak Surge Current

(Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz)

IFSM

100

A

Storage/Operating Case Temperature

Tstg, TC

−65 to +150

°C

Operating Junction Temperature

TJ

−65 to +150

°C

Voltage Rate of Change

(Rated VR, TJ = 25°C)

dv/dt

10,000

V/ms

Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit

values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied,

damage may occur and reliability may be affected.

THERMAL CHARACTERISTICS

Characteristic

Symbol

Min Pad

1 Inch Pad

Unit

Thermal Resistance, Junction−to−Lead (Note 1)

Thermal Resistance, Junction−to−Ambient (Note 1)

RqJL

RqJA

22

150

15

81

°C/W

ELECTRICAL CHARACTERISTICS

Maximum Instantaneous Forward Voltage (Note 2)

VF

TJ = 25°C

TJ = 100°C

V

(IF = 0.1 A)

(IF = 1.0 A)

(IF = 2.0 A)

0.405

0.480

0.500

0.275

0.355

0.385

Maximum Instantaneous Reverse Current

IR

TJ = 25°C

TJ = 100°C

mA

(VR = 5.0 V)

(VR = 10 V)

15

50

200

500

1. Mounted on a 3″ square FR4 PC Board with min. pads or 1″ square copper heat spreader.

2. Pulse Test: Pulse Width ≤ 250 ms, Duty Cycle ≤ 2%.

Surface Mount Schottky Power Rectifier

유사한 부품 번호 - MBRA210ET3

제조업체	부품명	데이터시트	상세설명
ON Semiconductor	MBRA210ET3	46Kb / 8P	Surface Mount Schottky Power Rectifier December, 2002 - Rev. 3
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	MBRA210ET3	100Kb / 5P	Surface Mount Schottky Power Rectifier August, 2008 ??Rev. 6

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유사한 설명 - MBRA210ET3

제조업체	부품명	데이터시트	상세설명
ON Semiconductor	MBRA140	72Kb / 4P	Surface Mount Schottky Power Rectifier April, 2002 ??Rev. 5
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	MBRA210ET3	100Kb / 5P	Surface Mount Schottky Power Rectifier August, 2008 ??Rev. 6
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MBRA210ET3 데이터시트(PDF) 1 Page - Shenzhen Taychipst Electronic Co., Ltd

MBRA210ET3 데이터시트(HTML) 1 Page - Shenzhen Taychipst Electronic Co., Ltd

유사한 부품 번호 - MBRA210ET3

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