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SSM6N37FU 데이터시트(PDF) 2 Page - Toshiba Semiconductor

부품명 SSM6N37FU
상세설명  High Speed Switching Applications Analog Switch Applications
PDF  5 Pages
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제조업체  TOSHIBA [Toshiba Semiconductor]
홈페이지  http://www.semicon.toshiba.co.jp/eng
Logo TOSHIBA - Toshiba Semiconductor

SSM6N37FU 데이터시트(HTML) 2 Page - Toshiba Semiconductor

  SSM6N37FU Datasheet HTML 1Page - Toshiba Semiconductor SSM6N37FU Datasheet HTML 2Page - Toshiba Semiconductor SSM6N37FU Datasheet HTML 3Page - Toshiba Semiconductor SSM6N37FU Datasheet HTML 4Page - Toshiba Semiconductor SSM6N37FU Datasheet HTML 5Page - Toshiba Semiconductor  
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SSM6N37FU
2010-08-31
2
Electrical Characteristics (Ta
= 25°C) (Q1, Q2 Common)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
V (BR) DSS
ID = 1 mA, VGS = 0 V
20
⎯
⎯
Drain-source breakdown voltage
V (BR) DSX
ID = 1 mA, VGS = -10 V
12
⎯
⎯
V
Drain cut-off current
IDSS
VDS = 20 V, VGS = 0 V
⎯
⎯
1
μA
Gate leakage current
IGSS
VGS = ±10 V, VDS = 0 V
⎯
⎯
±1
μA
Gate threshold voltage
Vth
VDS = 3 V, ID = 1 mA
0.35
⎯
1.0
V
Forward transfer admittance
|Yfs|
VDS = 3 V, ID = 100 mA
(Note2)
0.14
0.28
⎯
S
ID = 100 mA, VGS = 4.5 V (Note2)
⎯
1.65
2.20
ID = 50 mA, VGS = 2.5 V
(Note2)
⎯
2.16
3.02
ID = 20 mA, VGS = 1.8 V
(Note2)
⎯
2.66
4.05
Drain-source ON-resistance
RDS (ON)
ID = 10 mA, VGS = 1.5 V
(Note2)
⎯
3.07
5.60
Ω
Input capacitance
Ciss
⎯
12
⎯
Output capacitance
Coss
⎯
5.5
⎯
Reverse transfer capacitance
Crss
VDS = 10 V, VGS = 0 V, f = 1 MHz
⎯
4.1
⎯
pF
Turn-on time
ton
⎯
18
⎯
Switching time
Turn-off time
toff
VDD = 10 V, ID = 100 mA
VGS = 0 to 2.5 V, RG = 50 Ω
⎯
36
⎯
ns
Drain-Source forward voltage
VDSF
ID = -250 mA, VGS = 0 V
(Note2)
⎯
-0.9
-1.2
V
Note2: Pulse test
Switching Time Test Circuit
Precaution
Let Vth be the voltage applied between gate and source that causes the drain current (ID) to be low (1mA for the
SSM6N37FU). Then, for normal switching operation, VGS(on) must be higher than Vth, and VGS(off) must be lower than
Vth. This relationship can be expressed as: VGS(off) < Vth < VGS(on).
Take this into consideration when using the device.
Handling Precaution
When handling individual devices that are not yet mounted on a circuit board, make sure that the environment is
protected against electrostatic discharge. Operators should wear antistatic clothing, and containers and other objects that
come into direct contact with devices should be made of antistatic materials.
Thermal resistance Rth (ch-a) and power dissipation PD vary depending on board material, board area, board thickness
and pad area. When using this device, please take heat dissipation into consideration
2.5 V
ton
toff
0 V
VDD
VDS (ON)
tr
tf
10%
90%
90%
10%
(a) Test Circuit
VDD = 10 V
RG = 50Ω
Duty
≤ 1%
VIN : tr, tf < 5 ns
Common source
Ta
= 25°C
0 V
2.5 V
IN
OUT
VDD
10
μs
(b) VIN
(c) VOUT



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