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RN1107ACT 데이터시트(PDF) 2 Page - Toshiba Semiconductor

부품명 RN1107ACT
상세설명  Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications
PDF  6 Pages
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제조업체  TOSHIBA [Toshiba Semiconductor]
홈페이지  http://www.semicon.toshiba.co.jp/eng
Logo TOSHIBA - Toshiba Semiconductor

RN1107ACT 데이터시트(HTML) 2 Page - Toshiba Semiconductor

  RN1107ACT Datasheet HTML 1Page - Toshiba Semiconductor RN1107ACT Datasheet HTML 2Page - Toshiba Semiconductor RN1107ACT Datasheet HTML 3Page - Toshiba Semiconductor RN1107ACT Datasheet HTML 4Page - Toshiba Semiconductor RN1107ACT Datasheet HTML 5Page - Toshiba Semiconductor RN1107ACT Datasheet HTML 6Page - Toshiba Semiconductor  
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RN1107ACT ~ RN1109ACT
2009-04-13
2
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
ICBO
VCB = 50 V, IE = 0
⎯
⎯
100
Collector cut-off current
RN1107ACT to 1109ACT
ICEO
VCE = 50 V, IB = 0
⎯
⎯
500
nA
RN1107ACT
VEB = 6 V, IC = 0
0.088
⎯
0.131
RN1108ACT
VEB = 7 V, IC = 0
0.085
⎯
0.126
Emitter cut-off current
RN1109ACT
IEBO
VEB = 15 V, IC = 0
0.182
⎯
0.271
mA
RN1107ACT
80
⎯
⎯
RN1108ACT
80
⎯
⎯
DC current gain
RN1109ACT
hFE
VCE = 5 V, IC = 10 mA
70
⎯
⎯
Collector-emitter
saturation voltage
RN1107ACT to 1109ACT
VCE (sat)
IC = 5 mA,
IB = 0.25 mA
⎯
⎯
0.15
V
RN1107ACT
0.8
⎯
1.8
RN1108ACT
1.0
⎯
3.0
Input voltage (ON)
RN1109ACT
VI (ON)
VCE = 0.2 V, IC = 5 mA
2.0
⎯
6.4
V
RN1107ACT
0.6
⎯
0.9
RN1108ACT
0.7
⎯
1.2
Input voltage (OFF)
RN1109ACT
VI (OFF)
VCE = 5 V, IC = 0.1 mA
1.5
⎯
2.6
V
Collector output
capacitance
RN1107ACT to 1109ACT
Cob
VCB = 10 V, IE = 0,
f
= 1 MHz
⎯
0.7
⎯
pF
RN1107ACT
8
10
12
RN1108ACT
17.6
22
26.4
Input resistor
RN1109ACT
R1
⎯
37.6
47
56.4
k
Ω
RN1107ACT
0.17
0.213
0.255
RN1108ACT
0.374
0.468
0.562
Resistor ratio
RN1109ACT
R1/R2
⎯
1.71
2.14
2.56



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