| 전자부품 데이터시트 검색엔진 |
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RN1907FS 데이터시트(PDF) 2 Page - Toshiba Semiconductor |
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RN1907FS 데이터시트(HTML) 2 Page - Toshiba Semiconductor |
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2 / 6 page ![]() RN1907FS~RN1909FS 2007-11-01 2 Electrical Characteristics (Ta = 25°C) (Q1, Q2 common) Characteristics Symbol Test Condition Min Typ. Max Unit ICBO VCB = 20 V, IE = 0 ⎯ ⎯ 100 Collector cut-off current RN1907FS~1909FS ICEO VCE = 20 V, IB = 0 ⎯ ⎯ 500 nA RN1907FS VEB = 6 V, IC = 0 0.088 ⎯ 0.131 RN1908FS VEB = 7 V, IC = 0 0.085 ⎯ 0.126 Emitter cut-off current RN1909FS IEBO VEB = 15 V, IC = 0 0.182 ⎯ 0.271 mA RN1907FS 120 ⎯ ⎯ RN1908FS 120 ⎯ ⎯ DC current gain RN1909FS hFE VCE = 5 V, IC = 10 mA 100 ⎯ ⎯ Collector-emitter saturation voltage RN1907FS~1909FS VCE (sat) IC = 5 mA, IB = 0.25 mA ⎯ ⎯ 0.15 V RN1907FS 0.7 ⎯ 1.5 RN1908FS 0.8 ⎯ 2.2 Input voltage (ON) RN1909FS VI (ON) VCE = 0.2 V, IC = 5 mA 1.6 ⎯ 5.0 V RN1907FS 0.5 ⎯ 1.0 RN1908FS 0.6 ⎯ 1.1 Input voltage (OFF) RN1909FS VI (OFF) VCE = 5 V, IC = 0.1 mA 1.3 ⎯ 2.6 V Collector output capacitance RN1907FS~1909FS Cob VCB = 10 V, IE = 0, f = 1 MHz ⎯ 1.2 ⎯ pF RN1907FS 8 10 12 RN1908FS 17.6 22 26.4 Input resistor RN1909FS R1 ⎯ 37.6 47 56.4 k Ω RN1907FS 0.17 0.213 0.255 RN1908FS 0.374 0.468 0.562 Resistor ratio RN1909FS R1/R2 ⎯ 1.71 2.14 2.56 |
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