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RN2970FS 데이터시트(PDF) 1 Page - Toshiba Semiconductor

부품명 RN2970FS
상세설명  Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications
PDF  5 Pages
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제조업체  TOSHIBA [Toshiba Semiconductor]
홈페이지  http://www.semicon.toshiba.co.jp/eng
Logo TOSHIBA - Toshiba Semiconductor

RN2970FS 데이터시트(HTML) 1 Page - Toshiba Semiconductor

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RN2970FS,RN2971FS
2007-11-01
1
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) (Bias Resistor built-in Transistor)
RN2970FS,RN2971FS
Switching, Inverter Circuit, Interface Circuit and
Driver Circuit Applications
• Two devices are incorporated into a fine pitch Small Mold (6 pin)
package.
• Incorporating a bias resistor into a transistor reduces parts count.
Reducing the parts count enable the manufacture of ever more compact
equipment and save assembly cost.
• Complementary to RN1970FS, RN1971FS
Equivalent Circuit and Bias Resistor Values
Absolute Maximum Ratings (Ta = 25°C)
(Q1, Q2 common)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO
−20
V
Collector-emitter voltage
VCEO
−20
V
Emitter-base voltage
VEBO
−5
V
Collector current
IC
−50
mA
Collector power dissipation
PC (Note 1)
50
mW
Junction temperature
Tj
150
°C
Storage temperature range
Tstg
−55~150
°C
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant
change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating
conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 1: Total rating
Electrical Characteristics (Ta = 25°C) (Q1, Q2 common)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Collector cut-off current
ICBO
VCB = −20 V, IE = 0
⎯
⎯
−100
nA
Emitter cut-off current
IEBO
VEB = −5 V, IC = 0
⎯
⎯
−100
nA
DC current gain
hFE
VCE = −5 V, IC = −1 mA
300
⎯
⎯
Collector-emitter saturation voltage
VCE (sat)
IC = −5 mA, IB = −0.25 mA
⎯
−0.15
V
Collector output capacitance
Cob
VCB = −10 V, IE = 0, f = 1 MHz
⎯
1.2
⎯
pF
RN2970FS
3.76
4.7
5.64
Input resistor
RN2971FS
R1
⎯
8
10
12
k
Ω
Unit: mm
fS6
1.EMIITTER1
2.EMITTER2
3.BASE2
4.COLLECTOR2
5.BASE1
6.COLLECTOR1
0.1±0.05
6
0.8±0.05
1.0±0.05
1
2
0.1±0.05
3
5
4
(E1)
(E2)
(B2)
(C2)
(B1)
(C1)
JEDEC
―
JEITA
―
TOSHIBA
2-1F1C
Weight: 0.001g (typ.)
R1
B
C
E
Equivalent Circuit
(top view)
6
5
4
1
2
3
Q1
Q2


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