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ISO8200B 데이터시트(PDF) 11 Page - STMicroelectronics

부품명 ISO8200B
상세설명  Galvanic isolated octal high-side smart power solid state relay
PDF  33 Pages
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제조업체  STMICROELECTRONICS [STMicroelectronics]
홈페이지  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

ISO8200B 데이터시트(HTML) 11 Page - STMicroelectronics

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ISO8200B
Electrical characteristics
Doc ID 023802 Rev 1
11/33
Table 5.
Digital supply voltage
Symbol
Parameter
Test condition
Min.
Typ.
Max.
Unit
Vdd(under)
Vdd undervoltage protection
turn-OFF threshold
2.8
2.9
3
V
Vdd(hys)
Vdd undervoltage hysteresis
TBD
0.1
V
Idd
Vdd supply current
Input channel with a
steady logic level
5TBD
mA
Table 6.
Diagnostic pin and output protection function
Symbol
Parameter
Test condition
Min.
Typ.
Max.
Unit
VFAULT
FAULT pin open drain
voltage output low
IFAULT = 10 mA
0.4
V
ILFAULT
FAULT output leakage
current
VFAULT = 5 V
1
2
µA
IPEAK
Maximum DC output
current (1)
1.
Current level from open load to short-circuit until thermal intervention.
1.4
A
ILIM
Short-circuit current
limitation
RLOAD = 0
Ω
0.7
1.1
1.7
A
Hyst
ILIM tracking limits
RLOAD = 0
Ω
0.3
A
TJSD
Junction shutdown
temperature
150
170
°C
TJR
Junction reset temperature
150
°C
THIST
Junction thermal
hysteresis
20
°C
TCSD
Case shutdown
temperature
115
130
145
°C
TCR
Case reset temperature
110
°C
TCHYST Case thermal hysteresis
TBD
20
°C
V
demag
Output voltage at turn-OFF IOUT = 0.5 A; ILOAD > = 1 mH
Vcc-
45
Vcc-50 Vcc-52
V



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