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L6391 데이터시트(PDF) 17 Page - STMicroelectronics

부품명 L6391
상세설명  High-voltage high and low side driver
PDF  21 Pages
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제조업체  STMICROELECTRONICS [STMicroelectronics]
홈페이지  http://www.st.com
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L6391 데이터시트(HTML) 17 Page - STMicroelectronics

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L6391
Bootstrap driver
Doc ID 17892 Rev 1
17/21
The following equation is useful to compute the drop on the bootstrap DMOS:
Equation 3
where Qgate is the gate charge of the external power MOS, Rdson is the on resistance of the
bootstrap DMOS and Tcharge is the charging time of the bootstrap capacitor.
For example: using a power MOS with a total gate charge of 30nC the drop on the bootstrap
DMOS is about 1 V, if the Tcharge is 5 μs. In fact:
Equation 4
Vdrop has to be taken into account when the voltage drop on CBOOT is calculated: if this drop
is too high, or the circuit topology doesn’t allow a sufficient charging time, an external diode
can be used.
Figure 8.
Bootstrap driver with high voltage fast recovery diode
Figure 9.
Bootstrap driver with internal charge pump
V
drop
I
ch
e
arg Rdson
V
drop
→
Q
gate
T
ch
e
arg
------------------R
dson
==
V
drop
30nC
5
μs
--------------- 120
Ω 0.7V
∼
⋅
=
TO LOAD
H.V.
HVG
LVG
CBOOT
DBOOT
BOOT
V
CC
OUT
b
HVG
LVG
TO LOAD
H.V.
CBOOT
V
CC
OUT
BOOT



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