STRH8N10 datasheet(5/18 Pages) STMICROELECTRONICS

5 / 18 page

STRH8N10

Electrical characteristics

Doc ID 010029 Rev 2

5/18

Electrical characteristics

(TCASE = 25°C unless otherwise specified).

2.1

Pre-irradiation

Table 5.

On/off states

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

IDSS

Zero gate voltage drain

current (VGS = 0)

100% BVDss

1mA

80% BVDss

80% BVDss, TC = 125 °C

100

µA

IGSS

Gate body leakage current

(VDS = 0)

VGS = 20 V

VGS = -20 V

VGS = 20 V, TC = 125 °C

VGS = -20 V, TC = 125 °C

-100

-200

100

200

VGS(th)

Gate threshold voltage

VDS =VGS, ID = 1mA

VDS =VGS, ID = 1mA ,

TC = 125 °C

VDS =VGS, ID = 1mA ,

TC = -55 °C

1.5

2.1

4.5

3.7

5.5

RDS(on)

Static drain-source on

resistance

VGS = 12 V, ID = 4 A

VGS = 12 V, ID = 4 A,

TC = 125 °C

0.30

0.72

Ω

Table 6.

Dynamic

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

Ciss

Coss

(1)

Crss

This value is guaranteed over the full range of temperature.

Input capacitance

Output capacitance

Reverse transfer

capacitance

VDS = 25 V, f=1 MHz,

VGS=0V

527

659

791

114

Coss eq.

(1) Equivalent output

capacitance (2)

This value is defined as the ratio between the Qoss and the voltage value applied.

VDD = 80 V, VGS=0V

162

Qgs

Qgd

Total gate charge

Gate-to-source charge

Gate-to-drain (“Miller”)

charge

VDD = 50 V, ID = 4 A,

VGS= 12 V

18.5

5.5

(3)

Not tested, guaranteed by process.

Gate input resistance

f=1MHz gate DC bias=0

test signal level=20mV

open drain

1.6

Ω

STRH8N10 데이터시트(PDF) 5 Page - STMicroelectronics

STRH8N10 데이터시트(HTML) 5 Page - STMicroelectronics

Html Pages

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18

데이터시트 다운로드

링크 URL