STRH40N6 datasheet(5/16 Pages) STMICROELECTRONICS

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STRH40N6

Electrical characteristics

Doc ID 18351 Rev 5

5/16

Electrical characteristics

(TC = 25 °C unless otherwise specified).

Pre-irradiation

Table 5.

Pre-irradiation on/off states

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

IDSS

Zero gate voltage drain

current (VGS = 0)

80% BVDss

µA

IGSS

Gate body leakage current

(VDS = 0)

VGS = 20 V

VGS = -20 V

-100

100

BVDSS

(1)

This rating is guaranteed @ TJ ≥ 25 °C (see Figure 10: Normalized BVDSS vs temperature).

Drain-to-source breakdown

voltage

VGS = 0, ID = 1 mA

VGS(th)

Gate threshold voltage

VDS = VGS, ID = 1 mA

4.5

RDS(on)

Static drain-source on

resistance

VGS = 12 V

ID = 15 A

0.036

0.045

Table 6.

Pre-irradiation dynamic

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

Ciss

Coss

(1)

Crss

This value is guaranteed over the full range of temperature.

Input capacitance

Output capacitance

Reverse transfer

capacitance

VGS = 0, VDS = 25 V,

f=1MHz

1312

281

111

1640

351

139

1968

421

167

Qgs

Qgd

Total gate charge

Gate-to-source charge

Gate-to-drain (“Miller”)

charge

VDD = 30 V, ID = 40 A,

VGS=12 V

(2)

Not tested, guaranteed by process.

Gate input resistance

f=1MHz Gate DC Bias=0

Test signal level=20 mV

open drain

1.04

1.3

1.56

Table 7.

Pre-irradiation switching times

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

td(on)

td(off)

Turn-on delay time

Rise time

Turn-off-delay time

Fall time

VDD = 30 V, ID = 20 A,

RG = 4.7 Ω, VGS = 12 V

11.5

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