ACE633 datasheet(3/10 Pages) ACE

부품명	ACE633

상세설명	60V Complementary Enhancement Mode Field Effect Transistor

PDF	10 Pages

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제조업체	ACE [ACE Technology Co., LTD.]

홈페이지	http://www.ace-ele.com

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ACE633

60V Complementary Enhancement Mode Field Effect Transistor

VER 1.2

Switching

Total Gate Charge

VDS=30V, VGS=5V,

ID=5.3A

11.26

14.64

Gate-Source Charge

Qgs

3.77

4.9

Gate-Drain Charge

Qgd

4.08

5.3

Turn-On Delay Time

td(on)

VGS=4.5V, VDS=30V,

RL=6.8Ω

ID=-0.5A, RGEN=1Ω

18.12

36.24

Turn-On Rise Time

17.68

35.36

Turn-Off Delay Time

td(off)

Turn- Off Rise Time

8.92

17.84

Dynamic

Input Capacitance

Ciss

VGS=0V, VDS=30V,

f=1MHZ

1062.8

Output Capacitance

Coss

157.26

Reverse Transfer capacitance

Crss

56.56

Note:

A: The value of RθJA is measured with the device mounted on 1in² FR-4 board with 2oz. Copper, in a still air environment with

TA=25°C. The value in any given application depends on the user's specific board design.

B: Repetitive rating, pulse width limited by junction temperature.

C: The current rating is based on the t≤ 10s junction to ambient thermal resistance rating.

Typical Characteristics (N-Channel)

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