ACE2301B datasheet(2/5 Pages) ACE

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ACE2301B

P-Channel Enhancement Mode MOSFET

VER 1.3

Ordering information

ACE2301B XX + H

Electrical Characteristics

TA=25

OC unless otherwise noted

Parameter

Symbol

Conditions

Min.

Typ.

Max.

Unit

Off characteristics

Drain-Source Breakdown Voltage

V(BR)DSS

VGS=0V, ID=-250uA

-20

Drain Cut-off Current

IDSS

VDS=-20V, VGS=0V

-1

Gate-Source Leakage Current

IGSS

VGS=±8V, VDS=0V

±100

On characteristics

Drain-Source On-state Resistance

RDS(ON)

VGS=-4.5V, ID=-2.8A

100

130

RDS(ON)

VGS=-2.5V, ID=-2A

120

200

Gate Threshold Voltage

VGS(th)

VDS=VGS, ID=-250uA

-0.45

-0.75

-1.5

Forward Transconductance

gFS

VDS=-5V, ID=-2.8A

6.5

Switching characteristics

(3)

Turn-On Delay Time

Td(on)

VDD=-6V,RL=6R

ID=-1A, VGEN=-4.5V

RG=6R

Turn-Off Delay Time

td(off)

Dynamic characteristics

(3)

Input Capacitance

Ciss

VDS=-6V, VGS=0V

f=1.0MHz

415

Output Capacitance

Coss

223

Feedback Capacitance

Crss

Drain-source diode characteristics and maximum ratings

Diode Forward Voltage

VSD

IS=-1.6A,VGS=0V

-0.5

-1.2

Note: 1. Pulse width limited by maximum junction temperature

2. Pulse test: PW≦300us, duty cycle≦2%

3. For design AID only, not subject to production testing

4. Switching time is essentially independent of operating temperature

BM : SOT-23-3

Pb - free

Halogen - free

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