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ACE2341B 데이터시트(PDF) 1 Page - ACE Technology Co., LTD. |
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ACE2341B 데이터시트(HTML) 1 Page - ACE Technology Co., LTD. |
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1 / 6 page ![]() ACE2341B P-Channel Enhancement Mode Field Effect Transistor VER 1.2 1 Description The ACE2341B uses advanced trench technology to provide excellent RDS(ON) , low gate charge and operation gate voltages as low as 1.8V. This device is suitable for use as a load switch or other general applications. Features V DS =-20V, ID=-4.1A R DS(ON) <65m Ω @ V GS=-4.5V R DS(ON) <85 mΩ @ V GS=-2.5V R DS(ON) <125 mΩ @ V GS=-1.8V Absolute Maximum Ratings Parameter Symbol Max Unit Drain-Source Voltage VDS -20 V Gate-Source Voltage VGS ±12 V Drain Current (Continuous) TA=25 OC ID -4.1 A TA=70 OC -3.2 Drain Current (Pulse) IDM -30 A Power Dissipation TA=25 OC PD 1.4 W Operating and Storage Temperature Range TJ,TSTG -55 to 150 OC Packaging Type SOT-23-3L D 3 1 2 G S Ordering information ACE2341B XX + H SOT-23-3L Description 1 Gate 2 Source 3 Drain BM : SOT-23-3L Pb - free Halogen - free |
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