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ACE3400B 데이터시트(PDF) 2 Page - ACE Technology Co., LTD. |
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ACE3400B 데이터시트(HTML) 2 Page - ACE Technology Co., LTD. |
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2 / 6 page ![]() ACE3400B N-Channel Enhancement Mode MOSFET VER 1.2 2 Ordering information ACE3400B XX + H Electrical Characteristics TA=25℃, unless otherwise specified. Parameter Symbol Test Conditions Min Typ Max Unit Static Drain-source breakdown voltage V(BR)DSS VGS=0V, ID=250µA 30 34 V Zero gate voltage drain current IDSS VDS=24V, VGS=0V 1 µA Gate threshold voltage VGS(th) VGS=VDS, IDS=250µA 0.7 0.8 1 V Gate leakage current IGSS VGS=±12V, VDS=0V ±100 nA Drain-source on-state resistance RDS(ON) VGS=10V, ID=5.2A 24 28 mΩ VGS=4.5V, ID=5A 27 33 VGS=2.5V, ID=4A 39 52 Forward transconductance gFS VDS=5V, ID=5A 10 15 S Diode forward voltage VSD ISD=1A, VGS=0V 0.71 1 V Turn-on delay time td(on) VDS=15V, RL=2.3Ω, VGS=10V, RGEN=3Ω 18 ns Turn-off delay time td(off) 70 Input capacitance Ciss VGS=0V, VDS=15V, f=1.0MHz 697 pF Output capacitance Coss 259 Reverse transfer capacitance Crss 308 Note : 1. DUT is mounted on a 1in 2 FR-4 board with 2oz. Copper in a still air environment at 25° 2. Repetitive rating, pulse width limited by junction temperature. BM : SOT-23-3L Pb - free Halogen - free |
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