ACE3401B datasheet(2/6 Pages) ACE

2 / 6 page

ACE3401B

P-Channel Enhancement Mode Field Effect Transistor

VER 1.2

Electrical Characteristics

TA=25

OC unless otherwise noted

Parameter

Symbol

Conditions

Min.

Typ.

Max.

Unit

On/Off characteristics

Drain-Source Breakdown Voltage

V(BR)DSS

VGS=0V, ID=-250uA

-30

-34

Zero Gate Voltage Drain Current

IDSS

VDS=-30V, VGS=0V

-1

Gate Leakage Current

IGSS

VGS=±12V, VDS=0V

±100

Static Drain-Source On-Resistance

RDS(ON)

VGS=-10V, ID=-4.2A

mΩ

VGS=-4.5V, ID=-4A

VGS=-2.5V, ID=-1A

110

Gate Threshold Voltage

VGS(th)

VDS=VGS, ID=-250uA

-0.7

-1.0

-1.3

Forward Transconductance

gFS

VDS=-5V, ID=-4A

Drain Forward Voltage

VSD

IS=-1A,VGS=0V

-0.78

-1

Switching characteristics

(3)

Total Gate Charge

VDS=-15V, ID=-4A

VGS=-4.5V

6.4

8.3

Gate-Source Charge

Qgs

1.8

2.3

Gate-Drain Charge

Qgd

1.4

1.8

Turn-On Delay Time

Td(on)

VDD=-15V,RL=3.6Ω

ID=-1A, VGEN=-10V

RG=6Ω

11.4

22.72

Turn-On Rise Time

2.3

4.6

Turn-Off Delay Time

td(off)

34.9

69.8

Turn-Off Fall Time

3.5

Dynamic characteristics

(3)

Input Capacitance

Ciss

VDS=-15V, VGS=0V

f=1.0MHz

826

Output Capacitance

Coss

90.7

Reverse Transfer Capacitance

Crss

53.2

Note:

1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as

the solder mounting surface of the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board

design.

2. Pulse Test: Pulse Width

≤μ300s, Duty Cycle≤ 2.0%

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