| 전자부품 데이터시트 검색엔진 |
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STTH4R02-Y 데이터시트(PDF) 3 Page - STMicroelectronics |
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STTH4R02-Y 데이터시트(HTML) 3 Page - STMicroelectronics |
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3 / 9 page ![]() STTH4R02-Y Characteristics Doc ID 17391 Rev 1 3/9 Figure 1. Peak current versus duty cycle Figure 2. Forward voltage drop versus forward current (typical values) 0 5 10 15 20 25 30 35 40 45 50 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 I M(A) T d=tp/T tp I M T δ=tp/T tp I M P = 2 W P = 2 W P = 1 W P = 1 W P = 5 W P = 5 W δ I FM(A) 0 25 50 75 100 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 T j=25°C T j=150°C VFM(V) Figure 3. Forward voltage drop versus forward current (maximum values) Figure 4. Relative variation of thermal impedance, junction to ambient, versus pulse duration (SMB) 0 10 20 30 40 50 60 70 80 90 100 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 I FM(A) T j=25°C T j=150°C VFM(V) 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.E-01 1.E+00 1.E+01 1.E+02 1.E+03 Z th(j-a)/Rth(j-a) SMB S Cu=1cm² tp(s) Figure 5. Relative variation of thermal impedance, junction to ambient, versus pulse duration (SMC) Figure 6. Junction capacitance versus reverse applied voltage (typical values) 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.E-01 1.E+00 1.E+01 1.E+02 1.E+03 Z th(j-a)/Rth(j-a) SMC S Cu=1cm² tp(s) 10 100 1 10 100 1000 C(pF) F=1MHz V osc=30mVRMS T j=25°C VR(V) |
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