UF3N30

Preliminary

Power MOSFET

UNISONICTECHNOLOGIESCO.,LTD

2 of 3

www.unisonic.com.tw

QW-R502-826.a

ABSOLUTE MAXIMUM RATINGS

PARAMETER

SYMBOL

RATINGS

UNIT

Drain-Source Voltage

300

V

Gate-Source Voltage

±20

V

Continuous

3

A

Continuous Drain Current

Pulsed

12

A

Avalanche Energy

52

mJ

Power Dissipation

50

W

Junction Temperature

+150

°C

Storage Temperature Range

-55~+150

°C

Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

ELECTRICAL CHARACTERISTICS

PARAMETER

SYMBOL

TEST CONDITIONS

MIN TYP MAX UNIT

OFF CHARACTERISTICS

Drain-Source Breakdown Voltage

300

V

Drain-Source Leakage Current

1

µA

Forward

100

nA

Gate-Source Leakage Current

Reverse

-100 nA

ON CHARACTERISTICS

Gate Threshold Voltage

2

4

V

Static Drain-Source On-State Resistance

2

Ω

DYNAMIC PARAMETERS

Input Capacitance

200

pF

Output Capacitance

90

pF

Reverse Transfer Capacitance

30

pF

SWITCHING PARAMETERS

Total Gate Charge

4

nC

Gate to Source Charge

0.64

nC

Gate to Drain Charge

1.6

nC

Turn-ON Delay Time

10

ns

Rise Time

50

ns

Turn-OFF Delay Time

30

ns

Fall-Time

40

ns

SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS

Maximum Body-Diode Continuous Current

3

A

Maximum Body-Diode Pulsed Current

12

A

Drain-Source Diode Forward Voltage

1.3

V