2N80Z

Power MOSFET

UNISONICTECHNOLOGIESCO.,LTD

2 of 6

www.unisonic.com.tw

QW-R502-828.A

PARAMETER

SYMBOL

RATINGS

UNIT

Drain-Source Voltage

800

V

Gate-Source Voltage

±20

V

Avalanche Current (Note 1)

2.4

A

Drain Current

Continuous

2.4

A

Pulsed (Note 1)

9.6

A

Avalanche Energy

Single Pulsed (Note 2)

180

mJ

Repetitive (Note 1)

8.5

mJ

Peak Diode Recovery dv/dt (Note 3)

dv/dt

4.0

V/ns

Power Dissipation

24

W

Junction Temperature

+150

°C

Storage Temperature

-55~+150

°C

Notes: 1. Repetitive Rating: Pulse width limited by maximum junction temperature

4. Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

THERMAL DATA

PARAMETER

SYMBOL

RATINGS

UNIT

Junction to Ambient

62.5

°C/W

Junction to Case

5.2

°C/W

PARAMETER

SYMBOL

TEST CONDITIONS

MIN TYP MAX UNIT

OFF CHARACTERISTICS

Drain-Source Breakdown Voltage

800

V

0.9

V/°C

Drain-Source Leakage Current

10

µA

100

Gate- Source Leakage Current

Forward

5

µA

Reverse

-5

µA

ON CHARACTERISTICS

Gate Threshold Voltage

3.0

5.0

V

Static Drain-Source On-State Resistance

4.8

6.3

Ω

Forward Transconductance (Note 1)

2.65

S

DYNAMIC PARAMETERS

Input Capacitance

425

550

pF

Output Capacitance

45

60

pF

Reverse Transfer Capacitance

5.5

7.0

pF