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2N60ZG-TN3-R 데이터시트(PDF) 2 Page - Unisonic Technologies

부품명 2N60ZG-TN3-R
상세설명  2A, 600V N-CHANNEL POWER MOSFET
PDF  6 Pages
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제조업체  UTC [Unisonic Technologies]
홈페이지  http://www.utc-ic.com
Logo UTC - Unisonic Technologies

2N60ZG-TN3-R 데이터시트(HTML) 2 Page - Unisonic Technologies

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2N60Z
Power MOSFET
UNISONICTECHNOLOGIESCO.,LTD
2 of 6
www.unisonic.com.tw
QW-R502-829.B
ABSOLUTE MAXIMUM RATINGS (TC = 25°С, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
VDSS
600
V
Gate-Source Voltage
VGSS
±20
V
Avalanche Current (Note 2)
IAR
2.0
A
Drain Current
Continuous
ID
2.0
A
Pulsed (Note 2)
IDM
8.0
A
Avalanche Energy
Single Pulsed (Note 3)
EAS
140
mJ
Repetitive (Note 2)
EAR
4.5
mJ
Peak Diode Recovery dv/dt (Note 4)
dv/dt
4.5
V/ns
Power Dissipation
TO-220F
PD
23
W
TO-251/TO-252
44
W
Junction Temperature
TJ
+150
°С
Operating Temperature
TOPR
-55 ~ +150
°С
Storage Temperature
TSTG
-55 ~ +150
°С
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating : Pulse width limited by TJ
3. L=64mH, IAS=2.0A, VDD=50V, RG=25 Ω, Starting TJ = 25°C
4. ISD≤2.4A, di/dt≤200A/μs, VDD ≤ BVDSS, Starting TJ = 25°C
THERMAL DATA
PARAMETER
PACKAGE
SYMBOL
RATINGS
UNIT
Junction to Ambient
TO-220F
θJA
62.5
°С/W
TO-251/TO-252
100
°С/W
Junction to Case
TO-220F
θJc
5.5
°С/W
TO-251/TO-252
2.87
°С/W



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