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VNH5050ATR-E 데이터시트(PDF) 13 Page - STMicroelectronics |
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VNH5050ATR-E 데이터시트(HTML) 13 Page - STMicroelectronics |
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13 / 33 page ![]() VNH5050A-E Electrical specifications Doc ID 16009 Rev 10 13/33 VSENSE Max analog sense output voltage IOUT =10A; VCSD =0 V; RSENSE =800 Ω 5V ISENSETYP_500 Typical analog sense IOUT =500 mA; VCC =13V; Tj =- 40 °C 87 µA IOUT =500 mA; VCC =13V; Tj =25°C 91 µA IOUT =500 mA; VCC =13V; Tj =150 °C 100 µA ISENSE0 Analog sense leakage current IOUT =0 A; VSENSE =0 V; VCSD =5 V; VIN =0 V; Tj =- 40 °C to 150°C 05 µA VCSD =0 V; VIN =5 V; Tj = - 40 °C to 150 °C 0180 µA VCSD =5 V; VIN =5 V; IOUT =8.5 A 05 µA tDSENSEH Delay response time from falling edge of CS_DIS pin VIN =5 V; VSENSE <4 V, IOUT =8.5 A; ISENSE =90 % of ISENSEmax (see Figure 8) 50 µs tDSENSEL Delay response time from rising edge of CS_DIS pin VIN =5 V; VSENSE <4 V; IOUT =8.5 A; ISENSE =10 % of ISENSEmax (see Figure 8) 20 µs 1. Analog sense current drift is deviation of factor K for a given device over (-40°C to 150°C and 9V < VCC < 18 V) with respect to its value measured at Tj = 25 °C, VCC = 13 V. Table 12. Current sense (9 V < VCC < 18 V) (continued) Symbol Parameter Test conditions Min. Typ. Max. Unit |
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