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전자부품 데이터시트 검색엔진 |
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전자부품 데이터시트 검색엔진 |
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IRFS7437TRLPBF 데이터시트(PDF) 3 Page - International Rectifier |
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IRFS7437TRLPBF 데이터시트(HTML) 3 Page - International Rectifier |
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3 / 11 page  IRFS/SL7437PbF www.irf.com 3 September 06, 2012 D S G Dynamic @ TJ = 25°C (unless otherwise specified) Symbol Parameter Min. Typ. Max. Units gfs Forward Transconductance 160 ––– ––– S Qg Total Gate Charge ––– 150 225 nC Qgs Gate-to-Source Charge ––– 41 ––– Qgd Gate-to-Drain ("Miller") Charge ––– 51 ––– Qsync Total Gate Charge Sync. (Qg - Qgd) ––– 99 ––– td(on) Turn-On Delay Time ––– 19 ––– ns tr Rise Time ––– 70 ––– td(off) Turn-Off Delay Time ––– 78 ––– tf Fall Time ––– 53 ––– Ciss Input Capacitance ––– 7330 ––– pF Coss Output Capacitance ––– 1095 ––– Crss Reverse Transfer Capacitance ––– 745 ––– Coss eff. (ER) Effective Output Capacitance (Energy Related) ià ––– 1310 ––– Coss eff. (TR) Effective Output Capacitance (Time Related)h ––– 1735 ––– Diode Characteristics Symbol Parameter Min. Typ. Max. Units IS Continuous Source Current ––– ––– 250 A (Body Diode) ISM Pulsed Source Current ––– ––– 1000 A (Body Diode) Ãd VSD Diode Forward Voltage ––– 1.0 1.3 V trr Reverse Recovery Time ––– 30 ––– ns TJ = 25°C VR = 34V, ––– 30 ––– TJ = 125°C IF = 100A Qrr Reverse Recovery Charge ––– 24 ––– nC TJ = 25°C di/dt = 100A/μs g ––– 25 ––– TJ = 125°C IRRM Reverse Recovery Current ––– 1.3 ––– A TJ = 25°C ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) Conditions VGS = 10V g VDD = 20V ID = 100A, VDS =20V, VGS = 10V Conditions VDS = 10V, ID = 100A ID = 100A VDS =20V TJ = 25°C, IS = 100A, VGS = 0V g integral reverse p-n junction diode. MOSFET symbol showing the VGS = 0V, VDS = 0V to 32V VGS = 10V g VGS = 0V VDS = 25V ƒ = 1.0 MHz, See Fig. 5 VGS = 0V, VDS = 0V to 32V , See Fig. 11 ID = 30A RG = 2.7 Ω |
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