2N5679 datasheet(2/3 Pages) COMSET

2 / 3 page

2N5679 – 2N5680

24/09/2012

COMSET SEMICONDUCTORS

2/3

ELECTRICAL CHARACTERISTICS

Tj=25°C unless otherwise specified

Symbol

Ratings

Test Condition(s)

Min

Typ

Unit

ICBO

Collector Cutoff

Current

VCB = -100 V, IE = 0

2N5679

-1

µA

VCB = -120 V, IE = 0

2N5680

ICEO

Collector Cutoff

Current

VCE = -70 V, IB = 0

2N5679

-10

µA

VCE = -80 V, IB = 0

2N5680

ICEV

Collector Cutoff

Current

VCE = -100 V, VBE = 1.5 V

2N5679

-1

µA

VCE = -120 V, VBE = 1.5 V

2N5680

VCE = -100 V, VBE = 1.5 V

TC = 150°C

2N5679

-1

VCE = -120 V, VBE = 1.5 V

TC = 150°C

2N5680

IEBO

Emitter Cutoff

Current

VBE = -4.0 V, IC = 0

2N5679

-1

µA

2N5680

VCEO(sus)

Collector Emitter

Sustaining voltage (*)

IC = -10 mA, IB = 0

2N5679

-100

2N5680

-120

VCE(SAT)

Collector-Emitter

saturation Voltage (*)

IC = -250 mA

IB = -25 mA

2N5679

-0.6

2N5680

IC = -500 mA

IB = -50 mA

2N5679

-1

2N5680

IC = -1 A

IB = -200 mA

2N5679

-2

2N5680

VBE

Base-Emitter Voltage

(*)

IC = -250 mA, VCE = -2 V

2N5679

-1

2N5680

hFE

DC Current Gain (*)

IC = -250 mA, VCE = -2 V

2N5679

150

2N5680

IC = -1 A, VCE = -2 V

2N5679

2N5680

Transition frequency

IC = -100 mA, VCE = -10 V

f = 10 MHz

2N5679

MHz

2N5680

COB

Output Capacitance

IE = 0, VCB = -20 V

f = 1MHz

2N5679

2N5680

hfe

Small Signal Current

Gain

IC = -200 mA, VCE = -1.5 V

f = 1 kHz

2N5679

2N5680

(*) Pulse Width

≈ 300 µs, Duty Cycle ∠ 2.0%

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