BD433 datasheet(2/3 Pages) COMSET

2 / 3 page

NPN BD433 – BD435 – BD437

25/09/2012

COMSET SEMICONDUCTORS

2 | 3

ELECTRICAL CHARACTERISTICS

TC=25°C unless otherwise noted

Symbol

Ratings

Test Condition(s)

Min

Typ

Max

Unit

ICBO

Collector cut-off

current

IE= 0, VCB= 22 V

BD433

100

µA

IE= 0, VCB= 32 V

BD435

IE= 0, VCB= 45 V

BD437

ICES

Collector cut-off

current

VBE= 0, VCE= 22 V

BD433

100

VBE= 0, VCE= 32 V

BD435

VBE= 0, VCE= 45 V

BD437

IEBO

Emitter cut-offcurrent

IC= 0

VEB= 5 V

BD433

BD435

BD437

VCEO(SUS)

Collector-Emitter

sustaning Voltage (*)

IB= 0

IC= 100 mA

BD433

BD435

BD437

VCE(SAT)

Collector-Emitter

saturation Voltage (*)

IC= 2 A

IB= 200 mA

BD433

0.5

BD435

BD437

0.6

VBE

Base-Emitter

Voltage(*)

IC= 2 A

VCE= 1 V

BD433

1.1

BD435

BD437

1.2

hFE

DC Current Gain (*)

IC= 10 mA

VCE= 5 V

BD433

130

BD435

BD437

130

IC= 500 mA

VCE= 1 V

BD433

140

BD435

BD437

IC= 2 A

VCE= 1 V

BD433

BD435

BD437

Transition frequency

IC= 250 mA

VCE= 1 V

BD433

MHz

BD435

BD437

Measured under pulse conditions :tP <300µs, δ <1.5

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