BDW83B datasheet(2/3 Pages) COMSET

2 / 3 page

NPN BDW83, BDW83A, BDW83B,

BDW83C, BDW83D,

23/10/2012

COMSET SEMICONDUCTORS

2 | 3

ELECTRICAL CHARACTERISTICS

TC=25°C unless otherwise noted

Symbol

Ratings

Test Condition(s)

Min

Typ

Max

Unit

VCEO(SUS)

Collector-Emitter Sustaining

Voltage (*)

IC=30 mA

IB=0

BDW83

BDW83A

BDW83B

BDW83C

100

BDW83D

120

ICEO

Collector Cutoff Current

IB=0, VCE=30 V

BDW83

IB=0, VCE=30 V

BDW83A

IB=0, VCE=40 V

BDW83B

IB=0, VCE=50 V

BDW83C

IB=0, VCE=60 V

BDW83D

ICBO

Collector Cutoff Current

IE= 0, VCB=45 V

BDW83

0.5

IE= 0, VCB=60 V

BDW83A

IE= 0, VCB=80 V

BDW83B

IE= 0, VCB=100 V BDW83C

IE= 0, VCB=120 V BDW83D

IE= 0, VCB=45 V

Tcase = 150°C

BDW83

IE= 0, VCB=60 V

Tcase = 150°C

BDW83A

IE= 0, VCB=80 V

Tcase = 150°C

BDW83B

IE= 0, VCB=100 V

Tcase = 150°C

BDW83C

IE= 0, VCB=120 V

Tcase = 150°C

BDW83D

IEBO

Emitter Cutoff Current

VEB=5.0 V, IC=0

hFE

DC Current Gain (*)

IC=6 A , VCE=3.0 V

750

20 K

IC=15 A , VCE=3.0 V

100

VCE(SAT)

Collector-Emitter saturation

Voltage (1)

IC=6 A , IB=12 mA

2.5

IC=15 A , IB=150 mA

VBE(on)

Base-Emitter Voltage (*)

IC=6 A , IB=3 A

2.5

VEC

Parallel Diode Forward

Voltage

IE = 15 A , IE= 0

3.5

ton

Turn-on time

IC = 10 A,

IB1 =-IB2=40 mA

RL=3Ω; VBE(off) = -4.2V

Duty Cycle≤2%

0.9

µs

toff

Turn-off time

(*) Pulse Duration = 300

µs, Duty Cycle <= 2%

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