TIP3055 datasheet(2/3 Pages) COMSET

2 / 3 page

PNP TIP2955

NPN TIP3055

15/10/2012

COMSET SEMICONDUCTORS

2 | 3

SEMICONDUCTORS

ELECTRICAL CHARACTERISTICS

TC=25°C unless otherwise noted

Symbol

Ratings

Test Condition(s)

Min

Typ

Max

Unit

VCEO (*)

Collector-Emitter Breakdown

Voltage

IC= 30 mA, IB=0

ICEO

Collector Cutoff Current

IB =0, VCE = 30 V

700

µA

ICER

Collector Cutoff Current

VCE= 70 V, RBE= 100 Ω

ICEX

Collector Cutoff Current

VCE= 70 V, VBE= 1.5 V

IEBO

Emitter Cutoff Current

VEB= 7 V, IC=0

VCE(SAT) (*)

Collector-Emitter saturation

Voltage

IC= 4 A, IB= 400 mA

1.1

IC= 10 A, IB= 3.3 A

VBE (*)

Base-Emitter On Voltage

IC= 4 A, VCE = 4 V

1.8

hFE (*)

DC Current Gain

IC= 4 A, VCE = 4 V

IC= 10 A, VCE = 4 V

Is/b

Second Breackdown

collector Current.

With base Forward Biased

VCE= 30 V, t= 1.0 s

Non repetitive

Transition Frequency

VCE= 10 V, IC= 0.5 A

f= 1 kHz

2.5

MHz

(*) Pulse Width

≈ 300 µs, Duty Cycle ∠ 1.5%

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