2

US2302

N-Ch 20V Fast Switching MOSFETs

, unless otherwise noted)

US2302

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

STATIC CHARACTERISTICS

Drain-Source Breakdown Voltage

µA

20

-

-

V

-

-

1

Zero Gate Voltage Drain Current

-

-

30

µA

Gate Threshold Voltage

µA

0.5

0.7

1

V

Gate Leakage Current

-

-

±10

µA

-

50

65

-

65

90

a

Drain-Source On-state Resistance

-

120

200

m

Ω

a

Diode Forward Voltage

-

0.7

1.3

V

GATE CHARGE CHARACTERISTICS

b

Total Gate Charge

-

4.4

6

Gate-Source Charge

-

0.5

-

Gate-Drain Charge

-

1.6

-

nC

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

DYNAMIC CHARACTERISTICS

b

Gate Resistance

-

5

-

Ω

Input Capacitance

-

320

-

Output Capacitance

-

70

-

Reverse Transfer Capacitance

Frequency=1.0MHz

-

50

-

pF

Turn-On Delay Time

-

4

8

Turn-On Rise Time

-

14

26

Turn-Off Delay Time

-

21

39

Turn-Off Fall Time

Ω,

Ω

-

5

10

ns

Reverse Recovery Time

-

15

-

ns

Reverse Recovery Charge

µs

-

6

-

nC

Note a : Pulse test ; pulse width

≤300

Note b : Guaranteed by design, not subject to production testing.

US2302