MJ11013 MJ11015 MJ11012 MJ11014 MJ11016

2

Motorola Bipolar Power Transistor Device Data

Characteristics

Symbol

Min

Max

Unit

OFF CHARACTERISTICS

Collector–Emitter Breakdown Voltage(1)

(IC = 100 mAdc, IB = 0)

MJ11012

MJ11013, MJ11014

MJ11015, MJ11016

V(BR)CEO

60

90

120

—

—

—

Vdc

Collector–Emitter Leakage Current

(VCE = 60 Vdc, RBE = 1k ohm)

MJ11012

(VCE = 90 Vdc, RBE = 1k ohm)

MJ11013, MJ11014

(VCE = 120 Vdc, RBE = 1k ohm)

MJ11015, MJ11016

(VCE = 60 Vdc, RBE = 1k ohm, TC = 150_C)

MJ11012

(VCE = 90 Vdc, RBE = 1k ohm, TC = 150_C)

MJ11013, MJ11014

(VCE = 120 Vdc, RBE = 1k ohm, TC = 150_C)

MJ11015, MJ11016

ICER

—

—

—

—

—

—

1

1

1

5

5

5

mAdc

Emitter Cutoff Current

(VBE = 5 Vdc, IC = 0)

IEBO

—

5

mAdc

Collector–Emitter Leakage Current

(VCE = 50 Vdc, IB = 0)

ICEO

—

1

mAdc

ON CHARACTERISTICS(1)

DC Current Gain

(IC = 20 Adc,VCE = 5 Vdc)

(IC = 30 Adc, VCE = 5 Vdc)

hFE

1000

200

—

—

—

Collector–Emitter Saturation Voltage

(IC = 20 Adc, IB = 200 mAdc)

(IC = 30 Adc, IB = 300 mAdc)

VCE(sat)

—

—

3

4

Vdc

Base–Emitter Saturation Voltage

(IC = 20 A, IB = 200 mAdc)

(IC = 30 A, IB = 300 mAdc)

VBE(sat)

—

—

3.5

5

Vdc

DYNAMIC CHARACTERISTICS

Current–Gain Bandwidth Product

(IC = 10 A, VCE = 3 Vdc, f = 1 MHz)

hfe

4

—

MHz

(1) Pulse Test: Pulse Width

= 300 µs, Duty Cycle v 2.0%.