ACE2304

N-Channel Enhancement Mode MOSFET

VER 1.3

1

Description

The ACE2304 is the N-Channel logic enhancement mode power field effect transistor are produced

using high cell density, DMOS trench technology.

This high density process is especially tailored to minimize on-state resistance.

These devices are particularly suited for low voltage application such as cellular phone and notebook

computer power management and Battery powered circuits, and low in-line power loss are needed in a

very small outline surface mount package.

Features

DS(ON)

=65

mΩ@V

DS(ON)

=90

mΩ@V

DS(ON)

Application

Absolute Maximum Ratings

Parameter

Symbol

Max

Unit

Drain-Source Voltage

30

V

Gate-Source Voltage

±20

V

3.2

A

2.6

Pulsed Drain Current

10

A

Continuous Source Current (Diode Conduction)

1.25

A

Power Dissipation

1.25

W

0.8

Operating Junction Temperature

150

Storage Temperature Range

-55/150

Thermal Resistance-Junction to Ambient

100