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ACE2342 데이터시트(PDF) 3 Page - ACE Technology Co., LTD.

부품명 ACE2342
상세설명  N-Channel Enhancement Mode MOSFET
PDF  8 Pages
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제조업체  ACE [ACE Technology Co., LTD.]
홈페이지  http://www.ace-ele.com
Logo ACE - ACE Technology Co., LTD.

ACE2342 데이터시트(HTML) 3 Page - ACE Technology Co., LTD.

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ACE2342
N-Channel Enhancement Mode MOSFET
VER 1.3
3
Electrical Characteristics
(TA=25℃, Unless otherwise noted)
Parameter
Symbol
Conditions
Min.
Typ
Max.
Unit
Static
Drain-Source Breakdown Voltage
V(BR)DSS
VGS=0V, ID=-250uA
20
V
Gate Threshold Voltage
VGS(th)
VDS=VGS, ID=-250uA
0.4
1.0
Gate Leakage Current
IGSS
VDS=0.V, VGS=±12V
±100
nA
Zero Gate Voltage Drain Current
IDSS
VDS=20V, VGS=0V
1
uA
VDS=20V, VGS=0V TJ=55℃
10
On-State Drain Current
ID(ON)
VDS≧5V, VGS=4.5V
6
A
Drain-Source On-Resistance
RDS(ON)
VGS=4.5V, ID=5.0A
0.026
0.035
Ω
VGS=2.5V, ID=4.5A
0.029
0.040
VGS=1.8V, ID=4.0A
0.035
0.048
Forward Transconductance
Gfs
VDS=15V, ID=5.0A
30
S
Diode Forward Voltage
VSD
IS=-1.0A, VGS=0V
0.8
1.2
V
Dynamic
Total Gate Charge
Qg
VDS=10V, VGS=4.5V,
ID≡5.0A
10
13
nC
Gate-Source Charge
Qgs
1.4
Gate-Drain Charge
Qgd
2.1
Input Capacitance
Ciss
VDS=10V, VGS=0V,
f=1MHz
600
pF
Output Capacitance
Coss
120
Reverse Transfer Capacitance
Crss
100
Turn-On Time
td(on)
VDD=10V, RL=10Ω
ID≡1.0A, VGEN=4.5V
RG=6Ω
15
25
ns
tr
40
60
Turn-Off Time
td(off)
45
65
tf
30
40



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