ACE3413 datasheet(1/7 Pages) ACE

부품명	ACE3413

상세설명	P-Channel Enhancement Mode MOSFET

PDF	7 Pages

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제조업체	ACE [ACE Technology Co., LTD.]

홈페이지	http://www.ace-ele.com

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ACE3413

P-Channel Enhancement Mode MOSFET

VER 1.4

1

Description

The ACE3413 is the P-Channel logic enhancement mode power field effect transistors are produced

using high cell density, DMOS trench technology.

This high density process is especially tailored to minimize on-state resistance.

These devices are particularly suited for low voltage application such as cellular phone and notebook

computer power management and Battery powered circuits, and low in-line power loss are needed in a

very small outline surface mount package.

Features

 -20V/-3.4A, R

DS(ON)=95mΩ@VGS=-4.5V

 -20V/-2.4A, R

DS(ON)=120mΩ@VGS=-2.5V

 -20V/-1.7A, R

DS(ON)=145mΩ@VGS=-1.8V

 Super high density cell design for extremely low R

DS(ON)

 Exceptional on-resistance and maximum DC current capability

Application

 Power Management in Note book

 Portable Equipment

 Battery Powered System

 Load Switch

 DSC

 LCD Display inverter

Absolute Maximum Ratings

(TA=25℃ Unless otherwise noted)

Parameter

Symbol Typical Unit

Drain-Source Voltage

VDSS

-20

V

Gate-Source Voltage

VGSS

±12

V

Continuous Drain Current (TJ=150℃)

TA=25℃

ID

-3.5

A

TA=70℃

-2.8

Pulsed Drain Current

IDM

-15

A

Continuous Source Current (Diode Conduction)

IS

-1.4

A

Power Dissipation

TA=25℃

PD

1.25

W

TA=70℃

0.8

Operating Junction Temperature

TJ

-55/150 ℃

Storage Temperature Range

TSTG

-55/150 ℃

Thermal Resistance-Junction to Ambient

RθJA

105

℃/W

유사한 부품 번호 - ACE3413

제조업체	부품명	데이터시트	상세설명
ACE Technology Co., LTD...	ACE3413	173Kb / 8P	P-Channel Enhancement Mode MOSFET VER 1.2
ACE Technology Co., LTD...	ACE3413BM+	173Kb / 8P	P-Channel Enhancement Mode MOSFET VER 1.2

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ACE3413 데이터시트(PDF) 1 Page - ACE Technology Co., LTD.

ACE3413 데이터시트(HTML) 1 Page - ACE Technology Co., LTD.

유사한 부품 번호 - ACE3413

유사한 설명 - ACE3413

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