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ACT8600 데이터시트(PDF) 31 Page - Active-Semi, Inc |
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ACT8600 데이터시트(HTML) 31 Page - Active-Semi, Inc |
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31 / 50 page ![]() ACT8600 Rev 3, 15-Nov-12 Copyright © 2012 Active-Semi, Inc. Innovative Power TM ActivePMU TM and ActivePathTM are trademarks of Active-Semi. I 2CTM is a trademark of NXP. - 31 - www.active-semi.com (TA = 25°C, unless otherwise specified.) CH1: VVSYS, 2V/div CH2: VCHGIN, 5V/div CH3: VBAT, 2V/div CH4: ICHGIN, 500mA/div CH5: IBAT, 1A/div CH6: IVSYS, 1A/div TIME: 40ms/div DCCC and Battery Supplement Modes CH3 CH4 CH1 CH2 VBAT = 3.6V IVSYS = 1.5A VCHGIN = 5V-1A TYPICAL PERFORMANCE CHARACTERISTICS CONT’D CH5 CH6 |
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