AO4812_11 datasheet(2/5 Pages) AOSMD

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AO4812

Symbol

Min

Typ

Max

Units

BVDSS

VDS=30V, VGS=0V

TJ=55°C

IGSS

±100

VGS(th)

Gate Threshold Voltage

1.2

1.8

2.4

ID(ON)

TJ=125°C

Ω

gFS

VSD

0.76

2.5

Ciss

255

310

Coss

Crss

1.6

3.25

4.9

Ω

Qg(10V)

5.2

6.3

Qg(4.5V)

2.55

3.2

Qgs

0.85

Qgd

1.3

tD(on)

4.5

2.5

tD(off)

14.5

3.5

trr

8.5

Qrr

2.2

THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL

COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING

OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,

FUNCTIONS AND RELIABILITY WITHOUT NOTICE.

Input Capacitance

Output Capacitance

Turn-On Rise Time

IF=6A, dI/dt=100A/µs

VGS=0V, VDS=15V, f=1MHz

SWITCHING PARAMETERS

Body Diode Reverse Recovery Charge

VDS=VGS ID=250µA

VGS=4.5V, ID=5A

Forward Transconductance

Body Diode Reverse Recovery Time

VGS=10V, ID=6A

Reverse Transfer Capacitance

IF=6A, dI/dt=100A/µs

Maximum Body-Diode Continuous Current

Ω

VGS=10V, VDS=15V, RL=2.5Ω,

RGEN=3Ω

DYNAMIC PARAMETERS

Turn-Off DelayTime

Turn-On DelayTime

Gate resistance

VGS=0V, VDS=0V, f=1MHz

VDS=5V, ID=6A

RDS(ON)

Static Drain-Source On-Resistance

IDSS

µA

Zero Gate Voltage Drain Current

Turn-Off Fall Time

Total Gate Charge

VGS=10V, VDS=15V, ID=6A

Gate Source Charge

Gate Drain Charge

IS=1A,VGS=0V

Diode Forward Voltage

Electrical Characteristics (TJ=25°C unless otherwise noted)

STATIC PARAMETERS

Parameter

Conditions

Drain-Source Breakdown Voltage

On state drain current

ID=-250µA, VGS=0V

VGS=10V, VDS=5V

VDS=0V, VGS=±20V

Gate-Body leakage current

A. The value of RθJA is measured with the device mounted on 1in

2 FR-4 board with 2oz. Copper, in a still air environment with T

A =25°C. The

value in any given application depends on the user's specific board design.

B. The power dissipation PD is based on TJ(MAX)=150°C, using ≤ 10s junction-to-ambient thermal resistance.

C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep

initialTJ=25°C.

D. The RθJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient.

E. The static characteristics in Figures 1 to 6 are obtained using <300

µs pulses, duty cycle 0.5% max.

F. These curves are based on the junction-to-ambient thermal impedence which is measured with the device mounted on 1in

2 FR-4 board with

2oz. Copper, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse ratin g.

Rev 9: February 2011

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