AO4818_11 datasheet(2/6 Pages) AOSMD

2 / 6 page

AO4818

Symbol

Min

Typ

Max

Units

BVDSS

VDS=30V, VGS=0V

TJ=55°C

IGSS

µA

VGS(th)

Gate Threshold Voltage

1.2

1.8

2.4

ID(ON)

15.5

TJ=125°C

18.5

Ω

gFS

VSD

0.75

2.5

Ciss

600

740

888

Coss

110

145

Crss

115

0.5

1.1

1.7

Ω

Qg(10V)

Qg(4.5V)

7.5

Qgs

2.5

Qgd

tD(on)

3.5

tD(off)

3.5

trr

Qrr

COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING

OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,

FUNCTIONS AND RELIABILITY WITHOUT NOTICE.

Body Diode Reverse Recovery Time

Drain-Source Breakdown Voltage

On state drain current

ID=250µA, VGS=0V

VGS=10V, VDS=5V

VGS=10V, ID=8A

Reverse Transfer Capacitance

IF=8A, dI/dt=500A/µs

VGS=0V, VDS=15V, f=1MHz

SWITCHING PARAMETERS

Electrical Characteristics (TJ=25°C unless otherwise noted)

STATIC PARAMETERS

Parameter

Conditions

IDSS

µA

VDS=VGS ID=250µA

VDS=0V, VGS= ±20V

Zero Gate Voltage Drain Current

Gate-Body leakage current

Forward Transconductance

Diode Forward Voltage

RDS(ON)

Static Drain-Source On-Resistance

Ω

IS=1A,VGS=0V

VDS=5V, ID=8A

VGS=4.5V, ID=4A

VGS=10V, VDS=15V, RL=1.8Ω,

RGEN=3Ω

Gate resistance

VGS=0V, VDS=0V, f=1MHz

Turn-Off Fall Time

Total Gate Charge

VGS=10V, VDS=15V, ID=8A

Gate Source Charge

Gate Drain Charge

Total Gate Charge

Body Diode Reverse Recovery Charge IF=8A, dI/dt=500A/µs

Maximum Body-Diode Continuous Current

Input Capacitance

Output Capacitance

Turn-On DelayTime

DYNAMIC PARAMETERS

Turn-On Rise Time

Turn-Off DelayTime

A. The value of RθJA is measured with the device mounted on 1in

2 FR-4 board with 2oz. Copper, in a still air environment with T

A =25°C. The

value in any given application depends on the user's specific board design.

B. The power dissipation PD is based on TJ(MAX)=150°C, using ≤ 10s junction-to-ambient thermal resistance.

C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep

initialTJ=25°C.

D. The RθJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient.

E. The static characteristics in Figures 1 to 6 are obtained using <300

µs pulses, duty cycle 0.5% max.

F. These curves are based on the junction-to-ambient thermal impedence which is measured with the device mounted on 1in

2 FR-4 board with

2oz. Copper, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse ratin g.

Rev 7: Feb. 2011

www.aosmd.com

Page 2 of 6

AO4818 데이터시트(PDF) 2 Page - Alpha & Omega Semiconductors

AO4818 데이터시트(HTML) 2 Page - Alpha & Omega Semiconductors

Html Pages

1 2 3 4 5 6

데이터시트 다운로드

링크 URL