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RF--35 데이터시트(PDF) 19 Page - Freescale Semiconductor, Inc

부품명 RF--35
상세설명  RF Power LDMOS Transistors Enhancement--Mode Lateral MOSFETs
PDF  20 Pages
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제조업체  FREESCALE [Freescale Semiconductor, Inc]
홈페이지  http://www.freescale.com
Logo FREESCALE - Freescale Semiconductor, Inc

RF--35 데이터시트(HTML) 19 Page - Freescale Semiconductor, Inc

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MRF6VP3091NR1 MRF6VP3091NR5 MRF6VP3091NBR1 MRF6VP3091NBR5
19
RF Device Data
Freescale Semiconductor, Inc.
PRODUCT DOCUMENTATION, TOOLS AND SOFTWARE
Refer to the following documents, tools and software to aid your design process.
Application Notes
• AN1907: Solder Reflow Attach Method for High Power RF Devices in Over--Molded Plastic Packages
• AN1955: Thermal Measurement Methodology of RF Power Amplifiers
• AN3263: Bolt Down Mounting Method for High Power RF Transistors and RFICs in Over--Molded Plastic Packages
• AN3789: Clamping of High Power RF Transistors and RFICs in Over--Molded Plastic Packages
Engineering Bulletins
• EB212: Using Data Sheet Impedances for RF LDMOS Devices
Software
• Electromigration MTTF Calculator
• RF High Power Model
• .s2p File
For Software and Tools, do a Part Number search at http://www.freescale.com, and select the “Part Number” link. Go to the
Software & Tools tab on the part’s Product Summary page to download the respective tool.
REVISION HISTORY
The following table summarizes revisions to this document.
Revision
Date
Description
0
Sept. 2011
• Initial Release of Data Sheet
1
Dec. 2011
• Added R5 part numbers MRF6VP3091NR5 and MRF6VP3091NBR5, p. 1
• Fig. 7, CW Power Gain versus Output Power (Single--Ended Narrowband Test Circuit): adjusted x--axis
scale from 0 to 140 watts to 10 to 150 watts, p. 5
• Fig. 10, Intermodulation Distortion Products versus Two--Tone Spacing: added f = 860 MHz to graph
callouts, p. 6
• Added Fig. 21, 470--860 MHz Broadband 2″× 3.6″ Compact Reference Circuit Component Layout --
470--860 MHz -- Bottom, p. 10
• Added Fig. 22, 470--860 MHz Broadband 2″× 3.6″ Compact Reference Circuit Component Layout --
470--860 MHz -- Heatsink, p. 10



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