AD8610 datasheet(2/4 Pages) AD

2 / 4 page

PRELIMINARY TECHNICAL DATA

AD8610

—2—

REV. Pr0 9/27/01

ELECTRICALCHARACTERISTICS (@ V

S= ±5.0V, VCM = 0V, T A=+25°C unless noted

Parameter

Symbol

Conditions

Min

Typ

Max

Units

INPUT CHARACTERISTICS

Offset Voltage AD8610B

VOS

100

µV

-40°C < TA < +125°C

200

µV

Offset Voltage AD8610A

VOS

250

µV

+25C°< TA < +125°C

350

µV

-40°C < TA < +125°C

850

µV

Input Bias Current

-10

-40°C < TA < +85°C

-250

250

-40°C < TA < +125°C

-2.5

2.5

Input Offset Current

IOS

-10

-40°C < TA < +85°C

-75

-40°C < TA < +125°C

-150

150

Input Voltage Range

-2

Common-Mode Rejection Ratio

CMRR

VCM = -1.5V to 2.5V

Large Signal Voltage Gain

AVO

RL = 1 kΩ , Vo= -3V to 3V

100

200

V/mV

Offset Voltage Drift AD8610B

∆V

OS/∆T

-40°C < TA < +125°C

0.3

µV/°C

Offset Voltage Drift AD8610A

∆V

OS/∆T

-40°C < TA < +125°C

0.3

3.5

µV/°C

OUTPUT CHARACTERISTICS

Output Voltage High

VOH

RL = 1 kΩ, -40°C < TA < +125°C

3.8

Output Voltage Low

VOL

RL = 1 kΩ, -40°C < TA < +125°C

-3.8

Output Current

IOUT

VDropout < 1.2V

±15

POWER SUPPLY

Power Supply Rejection Ratio

PSRR

VS = ±5 V to ±13 V

100

110

Supply Current/Amplifier

ISY

VO = 0V

3000

µA

-40°C <TA < +125°C

3500

µA

DYNAMIC PERFORMANCE

Slew Rate

RL =2 kΩ

µs

Gain Bandwidth Product

GBP

MHz

Settling time

AV=+1, 4V step, to 0.01%

350

NOISE PERFORMANCE

Voltage Noise

en p-p

0.1 Hz to 10 Hz

1.2

µV p-p

Voltage Noise Density

f = 1 kHz

nV/

√Hz

Current Noise Density

f = 1 kHz

fA/

√Hz

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