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MBR20040CT 데이터시트(PDF) 1 Page - Naina Semiconductor ltd.

부품명 MBR20040CT
상세설명  Silicon Schottky Diode, 200A
PDF  2 Pages
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제조업체  NAINA [Naina Semiconductor ltd.]
홈페이지  http://www.nainasemi.com
Logo NAINA - Naina Semiconductor ltd.

MBR20040CT 데이터시트(HTML) 1 Page - Naina Semiconductor ltd.

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Naina Semiconductor Ltd.
MBR20020CT thru
MBR20040CTR
1
D-95, Sector 63, Noida – 201301, India
•
Tel: 0120-4205450
•
Fax: 0120-4273653
sales@nainasemi.com
•
www.nainasemi.com
Silicon Schottky Diode, 200A
Features
•
Guard Ring Protection
•
Low forward voltage drop
•
High surge current capability
•
Up to 100V VRRM
Maximum Ratings (TJ = 25
oC unless otherwise specified)
Parameter
Symbol
Conditions
MBR20020CT
(R)
MBR20030CT
(R)
MBR20035CT
(R)
MBR20040CT
(R)
Units
Repetitive peak
reverse voltage
VRRM
20
30
35
40
V
RMS reverse voltage
VRMS
14
21
25
28
V
DC blocking voltage
VDC
20
30
35
40
V
Average forward
current
IF(AV)
TC ≤ 135
oC
200
200
200
200
A
Non-repetitive
forward surge
current, half sine-
wave
IFSM
TC = 25
oC
tp = 8.3 ms
1500
1500
1500
1500
A
Electrical Characteristics (TJ = 25
oC unless otherwise specified)
Parameter
Symbol
Conditions
MBR20020CT
(R)
MBR20030CT
(R)
MBR20035CT
(R)
MBR20040CT
(R)
Units
DC forward voltage
VF
IF = 100 A
TJ = 25
oC
0.68
0.68
0.68
0.68
V
DC reverse current
IR
VR = 20 V
TJ = 25
oC
5
5
5
5
mA
VR = 20 V
TJ = 125
oC
200
200
200
200
Thermal Characteristics (TJ = 25
oC unless otherwise specified)
Parameter
Symbol
MBR20020CT
(R)
MBR20030CT
(R)
MBR20035CT
(R)
MBR20040CT
(R)
Units
Thermal resistance
junction to case
RthJ-C
0.5
0.5
0.5
0.5
oC/W
Operating, storage
temperature range
TJ , Tstg
- 40 to +175
- 40 to +175
- 40 to +175
- 40 to +175
oC
TWIN TOWER PACKAGE


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