AP2552/AP2553/AP2552A/AP2553A

Document number: DS35404 Rev. 5 - 2

4 of 16

www.diodes.com

December 2012

© Diodes Incorporated

AP2552/ AP2553/ AP2552A/ AP2553A

Symbol

Parameter

Ratings

Unit

ESD HBM

Human Body Model ESD Protection

2

kV

ESD CDM

Charged Device Model ESD Protection

500

V

VILIM,

,

EN

V

EN

V

-0.3 to +6.5

V

Continuous FAULT sink current

25

mA

ILIM source current

1

mA

Maximum Continuous Load Current

Internal Limited

A

Maximum Junction Temperature

-40 to +150

°C

Storage Temperature Range (Note 4)

-65 to +150

°C

Note:

Caution:

Stresses greater than the 'Absolute Maximum Ratings' specified above, may cause permanent damage to the device. These are stress ratings only;

functional operation of the device at these or any other conditions exceeding those indicated in this specification is not implied. Device reliability may be

affected by exposure to absolute maximum rating conditions for extended periods of time.

Semiconductor devices are ESD sensitive and may be damaged by exposure to ESD events. Suitable ESD precautions should be taken when

handling and transporting these devices.

Dissipation Rating Table

Board

Package

Thermal

Resistance

Thermal

Resistance

Power

Rating

Derating Factor

Above

Power Rating

Power

Rating

High-K (Note 5)

W6

160°C/W

55°C/W

625mW

6.25mW/°C

340mW

250mW

High-K (Note 5)

FDC

120°C/W

34°C/W

833mW

8.33mW/°C

450mW

330mW

Note:

5. The JEDEC high-K (2s2p) board used to derive this data was a 3in x 3in, multilayer board with 1-ounce internal power and ground planes with

2-ounce copper traces on top and bottom of the board.

Symbol

Parameter

Min

Max

Unit

Input Voltage

2.7

5.5

V

Continuous Output Current (-40

0

2.1

A

,

EN

V

EN

V

Enable Voltage

0

5.5

V

High-Level Input Voltage on EN or

EN

2.0

V

Low-Level Input Voltage on EN or

EN

0

0.8

V

Current-Limit Threshold Resistor Range

(1% initial tolerance)

10

210

k

Ω

Continuous FAULT Sink Current

0

10

mA

Input De-Coupling Capacitance, IN to GND

0.1

µF

Operating Ambient Temperature

-40

+85

°C

Operating Junction Temperature

-40

+125

°C