REV. 0

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a

ADG721/ADG722/ADG723

One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A.

Tel: 781/329-4700

World Wide Web Site: http://www.analog.com

Fax: 781/326-8703

© Analog Devices, Inc., 1998

CMOS

Low Voltage 4

Dual SPST Switches

FUNCTIONAL BLOCK DIAGRAMS

ADG721

IN1

D2

S2

S1

D1

IN2

ADG722

IN1

D2

S2

S1

D1

IN2

ADG723

IN1

D2

S2

S1

D1

IN2

SWITCHES SHOWN FOR A LOGIC "0" INPUT

FEATURES

+1.8 V to +5.5 V Single Supply

4

(Max) On Resistance

Low On-Resistance Flatness

–3 dB Bandwidth >200 MHz

Rail-to-Rail Operation

8-Lead

SOIC Package

Fast Switching Times

Low Power Consumption (<0.1

W)

TTL/CMOS Compatible

APPLICATIONS

Battery Powered Systems

Communication Systems

Sample Hold Systems

Audio Signal Routing

Video Switching

Mechanical Reed Relay Replacement

GENERAL DESCRIPTION

The ADG721, ADG722 and ADG723 are monolithic CMOS

SPST switches. These switches are designed on an advanced

submicron process that provides low power dissipation yet gives

high switching speed, low On resistance and low leakage currents.

The ADG721, ADG722 and ADG723 are designed to operate

from a single +1.8 V to +5.5 V supply, making them ideal for

use in battery powered instruments and with the new generation

of DACs and ADCs from Analog Devices.

The ADG721, ADG722 and ADG723 contain two independent

single-pole/single-throw (SPST) switches. The ADG721 and

ADG722 differ only in that both switches are normally open and

normally closed respectively. While in the ADG723, Switch 1 is

normally open and Switch 2 is normally closed.

Each switch of the ADG721, ADG722 and ADG723 conducts

equally well in both directions when on. The ADG723 exhibits

break-before-make switching action.

PRODUCT HIGHLIGHTS

1. +1.8 V to +5.5 V Single Supply Operation. The ADG721,

ADG722 and ADG723 offers high performance, including

low on resistance and fast switching times and is fully speci-

fied and guaranteed with +3 V and +5 V supply rails.

Ω max at 5 V, 10 Ω max at 3 V). At 1.8 V

Ω over the temperature range.

3. Low On-Resistance Flatness.

4. –3 dB Bandwidth >200 MHz.

5. Low Power Dissipation. CMOS construction ensures low

power dissipation.

7. 8-Lead

µSOIC.