NXP Semiconductors

PSMN4R2-60PL

N-channel 60 V, 3.9 mΩ logic level MOSFET in SOT78

PSMN4R2-60PL

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Product data sheet

5 February 2013

7 / 13

003aah907

0

120

240

360

0

1

2

3

4

5

(A)

Fig. 8. Transfer characteristics; drain current as a

function of gate-source voltage; typical values

003aah025

0

0.5

1

1.5

2

2.5

3

-60

0

60

120

180

(V)

max

typ

min

Fig. 9. Gate-source threshold voltage as a function of

junction temperature

003aah026

0

1

2

3

(A)

max

typ

min

Fig. 10. Sub-threshold drain current as a function of

gate-source voltage

003aah910

0

5

10

15

0

60

120

180

(mΩ)

4.5

2.8

2.6

3

Fig. 11. Drain-source on-state resistance as a function

of drain current; typical values