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AOZ8204DI 데이터시트(PDF) 2 Page - Alpha & Omega Semiconductors

부품명 AOZ8204DI
상세설명  Four-line TVS Diode Array
PDF  7 Pages
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제조업체  AOSMD [Alpha & Omega Semiconductors]
홈페이지  http://www.aosmd.com
Logo AOSMD - Alpha & Omega Semiconductors

AOZ8204DI 데이터시트(HTML) 2 Page - Alpha & Omega Semiconductors

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AOZ8204DI
Rev. 1.0 August 2011
www.aosmd.com
Page 2 of 7
Ordering Information
AOS Green Products use reduced levels of Halogens, and are also RoHS compliant.
Please visit www.aosmd.com/web/quality/rohs_compliant.jsp for additional information.
Absolute Maximum Ratings
Exceeding the Absolute Maximum ratings may damage the device.
Notes:
1. IEC 61000-4-2 discharge with CDischarge = 150pF, RDischarge = 330.
2. Human Body Discharge per MIL-STD-883, Method 3015 CDischarge = 100pF, RDischarge = 1.5k.
Maximum Operating Ratings
Electrical Characteristics
TA = 25°C unless otherwise specified. Specifications in BOLD indicate a temperature range of -40°C to +85°C.
Notes:
3. The working peak reverse voltage, VRWM, should be equal to or greater than the DC or continuous peak operating voltage level.
4. VBR is measured at the pulse test current IT.
Part Number
Ambient Temperature Range
Package
Environmental
AOZ8204DI
-40°C to +85°C
DFN 1.6x1.6
Green Product
RoHS Compliant
Parameter
Rating
VP – VN
5V
Peak Pulse Current (IPP), tP = 8/20µs
5A
Storage Temperature (TS)
-65°C to +150°C
ESD Rating per IEC61000-4-2, Contact(1)
±30kV
ESD Rating per IEC61000-4-2, Air(1)
±30kV
ESD Rating per Human Body Model(2)
±30kV
Parameter
Rating
Junction Temperature (TJ)
-40°C to +125°C
Symbol
Parameter
Conditions
Min.
Typ.
Max.
Units
VRWM
Reverse Working Voltage
Between pin 5 and 2(3)
5.0
V
VBR
Reverse Breakdown Voltage
IT = 1mA, between pins 5 and 2
(4)
8.0
V
IR
Reverse Leakage Current
VRWM = 5V, between pins 5 and 2
0.1
µA
VF
Diode Forward Voltage
IF = 15mA
0.70
0.85
1
V
VCL
Channel Clamp Voltage
Positive Transients
Negative Transient
IPP = 15A, tp = 100ns, any I/O pin to Ground
7.0
-6.75
V
V
Channel Clamp Voltage
Positive Transients
Negative Transient
IPP = 25A, tp = 100ns, any I/O pin to Ground
7.50
-10.25
V
V
Cj
Junction Capacitance
VR = 0V, f = 1MHz, any I/O pin to Ground
15
17
pF



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