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MAT02EH 데이터시트(PDF) 7 Page - Analog Devices |
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MAT02EH 데이터시트(HTML) 7 Page - Analog Devices |
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7 / 12 page ![]() MAT02 –7– REV. C Figure 18. Log Conformance Test Circuit LOG CONFORMANCE TESTING The log conformance of the MAT02 is tested using the circuit shown above. The circuit employs a dual transdiode logarith- mic converter operating at a fixed ratio of collector currents that are swept over a 10:1 range. The output of each transdiode converter is the VBE of the transistor plus an error term which is the product of the collector current and rBE, the bulk emitter resistance. The difference of the VBE is amplified at a gain of ×100 by the AMP01 instrumentation amplifier. The differen- tial emitter-base voltage ( ∆V BE) consists of a temperature- dependent dc level plus an ac error voltage which is the devia- tion from true log conformity as the collector currents vary. The output of the transdiode logarithmic converter comes from the idealized intrinsic transistor equation (for silicon): VBE = kT q In IC IS where (1) k = Boltzmann’s Constant (1.38062 × 10-23 J/°K) q = Unit Electron Charge (1.60219 × 10-19 °C) T = Absolute Temperature, °K (= °C + 273.2) IS = Extrapolated Current for VBE→0 IC = Collector Current An error term must be added to this equation to allow for the bulk resistance (rBE) of the transistor. Error due to the op amp input current is limited by use of the OP15 BiFET-input op amp. The resulting AMP01 input is: ∆V BE = kT q In IC1 IC2 + IC1 rBE1 – IC2 rBE2 (2) A ramp function which sweeps from 1 V to 10 V is converted by the op amps to a collector current ramp through each transistor. Because IC1 is made equal to 10 IC2, and assuming TA = 25°C, the previous equation becomes: ∆V BE = 59 mV + 0.9 IC1 rBE ( ∆r BE ~ 0) As viewed on an oscilloscope, the change in ∆V BE for a 10:1 change in IC is then displayed as shown below: |
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