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Motorola Small–Signal Transistors, FETs and Diodes Device Data

Low rDS(on) Small-Signal MOSFETs

TMOS Single N-Channel

Field Effect Transistors

These miniature surface mount MOSFETs utilize Motorola’s High

Cell Density, HDTMOS process. Low rDS(on) assures minimal

power loss and conserves energy, making this device ideal for use

in small power management circuitry. Typical applications are

dc–dc converters, power management in portable and battery–

powered products such as computers, printers, PCMCIA cards,

cellular and cordless telephones.

• Low rDS(on) Provides Higher Efficiency and Extends Battery Life

• Miniature SOT–23 Surface Mount Package Saves Board Space

Rating

Symbol

Value

Unit

Drain–to–Source Voltage

VDSS

20

Vdc

Gate–to–Source Voltage — Continuous

VGS

± 20

Vdc

Drain Current — Continuous @ TA = 25°C

ID

ID

IDM

300

240

750

mAdc

Total Power Dissipation @ TA = 25°C(1)

PD

225

mW

Operating and Storage Temperature Range

TJ, Tstg

– 55 to 150

°C

Thermal Resistance — Junction–to–Ambient

R

θJA

625

°C/W

Maximum Lead Temperature for Soldering Purposes, 1/8

″ from case for 10 seconds

TL

260

°C

DEVICE MARKING

N1

(1) Mounted on G10/FR4 glass epoxy board using minimum recommended footprint.

ORDERING INFORMATION

Device

Reel Size

Tape Width

Quantity

MMBF0201NLT1

7

″

12 mm embossed tape

3000

MMBF0201NLT3

13

″

12 mm embossed tape

10,000

HDTMOS is a trademark of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc.

Thermal Clad is a registered trademark of the Berquist Company.

Preferred devices are Motorola recommended choices for future use and best overall value.

Order this document

by MMBF0201N/D

MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

CASE 318–07, Style 21

SOT–23 (TO–236AB)

MMBF0201N

N–CHANNEL

ENHANCEMENT–MODE

TMOS MOSFET

rDS(on) = 1.0 OHM

Motorola Preferred Device

™

1

2

3

3 DRAIN

1

GATE

2 SOURCE