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DG646BH25 데이터시트(PDF) 2 Page - Dynex Semiconductor

부품명 DG646BH25
상세설명  Gate Turn-off Thyristor
PDF  14 Pages
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제조업체  DYNEX [Dynex Semiconductor]
홈페이지  http://www.dynexsemi.com
Logo DYNEX - Dynex Semiconductor

DG646BH25 데이터시트(HTML) 2 Page - Dynex Semiconductor

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SEMICONDUCTOR
DG646BH25
2/14
www.dynexsemi.com
SURGE RATINGS
Symbol
Parameter
Test Conditions
Max.
Units
ITSM
Surge (non repetitive) on-state current
10ms half sine. Tj = 125°C
18.0
kA
I
2t
I
2t for fusing
10ms half sine. Tj = 125°C
16.2
MA
2s
diT/dt
Critical rate of rise of on-state current
VD = 1500V, IT = 2000A, Tj = 125°C, I FG > 30A,
Rise time > 1.0 µs
300
A/µs
To 66% VDRM; RGK ≤ 1.5 , Tj = 125°C
135
V/µs
dVD/dt
Rate of rise of off-state voltage
To 66% VDRM; VRG ≤ -2V, Tj = 125°C
1000
V/µs
LS
Peak stray inductance in snubber
circuit
IT = 2000A, VDM = 2500V, Tj = 125°C, di GQ/dt = 40A/µs,
CS = 2.0µF
200
nH
GATE RATINGS
Symbol
Parameter
Test Conditions
Min.
Max.
Units
VRGM
Peak reverse gate voltage
This value may be exceeded during turn-off
-
16
V
IFGM
Peak forward gate current
20
100
A
PFG(AV)
Average forward gate power
-
15
W
PRGM
Peak reverse gate power
-
19
kW
diGQ/dt
Rate of rise of reverse gate current
30
60
A/µs
tON(min)
Minimum permissible on time
50
-
µs
tOFF(min)
Minimum permissible off time
100
-
µs
THERMAL AND MECHANICAL RATINGS
Symbol
Parameter
Test Conditions
Min.
Max.
Units
Double side cooled
DC
-
0.018
°C/W
Anode DC
-
0.03
°C/W
Rth(j-hs)
Thermal resistance – junction to
heatsink surface
Single side cooled
Cathode DC
-
0.045
°C/W
Rth(c-hs)
Contact thermal resistance
Clamping force 20.0kN
With mounting compound
Per contact
-
0.006
°C/W
Tvj
Virtual junction temperature
On-state (conducting)
-
125
°C
TOP/Tstg
Operating junction/storage
temperature range
-40
125
°C
Fm
Clamping force
18.0
22.0
kN



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