OP777ARM datasheet(2/12 Pages) AD

2 / 12 page

–2–

REV. 0

OP777–SPECIFICATIONS

ELECTRICAL CHARACTERISTICS

Parameter

Symbol

Conditions

Min

Typ

Max

Unit

INPUT CHARACTERISTICS

Offset Voltage

VOS

100

µV

–40

°C ≤ TA ≤ +85°C

200

µV

Input Bias Current

–40

°C ≤ T

≤ +85°C11

Input Offset Current

IOS

–40

°C ≤ TA ≤ +85°C2

Input Voltage Range

Common-Mode Rejection Ratio

CMRR

VCM = 0 V to 4 V

104

110

Large Signal Voltage Gain

AVO

RL = 10 k

Ω , VO = 0.5 V to 4.5 V

300

500

V/mV

Offset Voltage Drift

∆VOS/∆T

–40

°C ≤ TA ≤ +85°C

0.3

1.3

µV/°C

OUTPUT CHARACTERISTICS

Output Voltage High

VOH

IL = 1 mA, –40

°C ≤ TA ≤ +85°C

4.88

Output Voltage Low

VOL

IL = 1 mA, –40

°C ≤ T

≤ +85°C

140

Short Circuit Limit

IOUT

VDROPOUT < 1 V

±10

POWER SUPPLY

Power Supply Rejection Ratio

PSRR

VS = 3 V to 30 V

120

130

Supply Current/Amplifier

ISY

VO = 0 V

270

µA

–40

°C ≤ TA ≤ +85°C

270

320

µA

DYNAMIC PERFORMANCE

Slew Rate

RL = 2 k

Ω

0.2

µs

Gain Bandwidth Product

GBP

0.7

MHz

NOISE PERFORMANCE

Voltage Noise

enp-p

0.1 Hz to 10 Hz

0.4

µVp-p

Voltage Noise Density

f = 1 kHz

nV/

√Hz

Current Noise Density

f = 1 kHz

0.13

pA/

√Hz

Specifications subject to change without notice.

(VS = 5.0 V, VCM = 2.5 V, TA = 25 C unless otherwise noted)

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