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SSM2017P 데이터시트(PDF) 3 Page - Analog Devices |
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SSM2017P 데이터시트(HTML) 3 Page - Analog Devices |
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3 / 8 page ![]() SSM2017 –3– REV. C WARNING! ESD SENSITIVE DEVICE CAUTION ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily accumulate on the human body and test equipment and can discharge without detection. Although the SSM2017 features proprietary ESD protection circuitry, permanent damage may occur on devices subjected to high energy electrostatic discharges. Therefore, proper ESD precautions are recommended to avoid performance degradation or loss of functionality. Typical Performance Characteristics Figure 1. Typical THD+Noise* at G = 1, 10, 100, 1000; VO = 7 V rms, VS = ±15 V, RL = 5 kΩ; TA = +25°C *80 kHz low-pass filter used for Figures 1-2. ABSOLUTE MAXIMUM RATINGS Supply Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ±22 V Input Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . Supply Voltage Output Short Circuit Duration . . . . . . . . . . . . . . . . . . . 10 sec Storage Temperature Range (P, Z Packages) –65 °C to +150°C Junction Temperature (TJ) . . . . . . . . . . . . . –65 °C to +150°C Lead Temperature Range (Soldering, 60 sec) . . . . . . . . 300 °C Operating Temperature Range . . . . . . . . . . . . –40 °C to +85°C Thermal Resistance* 8-Pin Hermetic DIP (Z): θ JA = 134; θ JC = 12 . . . . . . °C/W 8-Pin Plastic DIP (P): θ JA = 96; θJC = 37 . . . . . . . . . . °C/W 16-Pin SOIC (S): θ JA = 92; θ JC = 27 . . . . . . . . . . . . . °C/W * θ JA is specified for worst case mounting conditions, i.e., θ JA is specified for device in socket for cerdip and plastic DIP; θ JA is specified for device soldered to printed circuit board for SOL package. ORDERING GUIDE Temperature Package Package Model Range* Description Option SSM2017P –40 °C to +85°C 8-Pin Plastic DIP N-8 SSM2017S –40 °C to +85°C 16-Lead SOL R-16 SSM2017S-REEL –40 °C to +85°C 16-Lead SOL R-16 *XIND = –40 °C to +85°C. Figure 2. Typical THD+ Noise * at G = 2, 10, 100, 1000; VO = 10 V rms, VS = ±18 V, RL = 5 kΩ; TA = +25°C |
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