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TMP12 데이터시트(PDF) 3 Page - Analog Devices |
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TMP12 데이터시트(HTML) 3 Page - Analog Devices |
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3 / 14 page ![]() CAUTION ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily accumulate on the human body and test equipment and can discharge without detection. Although the TMP12 features proprietary ESD protection circuitry, permanent damage may occur on devices subjected to high energy electrostatic discharges. Therefore, proper ESD precautions are recommended to avoid performance degradation or loss of functionality. TMP12 REV. 0 –3– Parameter Symbol Conditions Min Typ Max Units ACCURACY Accuracy (High, Low Setpoints) TA = 25 °C 3 °C Internal Scale Factor TA = 25 °C 4.9 5 5.1 mV/ °C SETPOINT INPUTS Input Bias Current IB 100 nA VREF OUTPUT Output Voltage VREF TA = 25 °C, No Load 2.49 2.51 V OPEN-COLLECTOR OUTPUTS Output Low Voltage VOL ISINK = 1.6 mA 0.4 V Output Leakage Current IOH VS = 12 V 100 µA HEATER Resistance RH TA = 25 °C 97 100 103 Ω POWER SUPPLY Supply Range VS 4.5 5.5 V Supply Current ISY Unloaded at 5 V 600 µA NOTE Electrical tests are performed at wafer probe to the limits shown. Due to variations in assembly methods and normal yield loss, yield after packaging is not guaranteed for standard product dice. Consult factory to negotiate specifications based on dice lot qualification through sample lot assembly and testing. DICE CHARACTERISTICS Die Size 0.078 0.071 inch, 5,538 sq. mils (1.98 1.80 mm, 3.57 sq. mm) Transistor Count: 105 WAFER TEST LIMITS (V S = 5 V, GND = O V, TA = 25 °C, unless otherwise noted.) 1. VREF 2. SET HIGH INPUT 3. SET LOW INPUT 4. GND 5. HEATER 6. UNDER OUTPUT 7. OVER OUTPUT 8. V For additional DICE ordering information, refer to databook. 8 3 7 5 4 1 2 WARNING! ESD SENSITIVE DEVICE 6 |
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