V

DS

, DRAIN-TO-SOURCE VOLTAGE (VOLTS)

V

DS

, DRAIN-TO-SOURCE VOLTAGE (VOLTS)

FIGURE 10, MAXIMUM SAFE OPERATING AREA

FIGURE 11, TYPICAL CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE

V

SD

, SOURCE-TO-DRAIN VOLTAGE (VOLTS)

FIGURE 12, GATE CHARGES vs GATE-TO-SOURCE VOLTAGE

FIGURE 13, TYPICAL SOURCE-DRAIN DIODE FORWARD VOLTAGE

APT10M07JVR

TC =+25°C

TJ =+150°C

SINGLE PULSE

OPERATION HERE

LIMITED BY RDS (ON)

1

5

10

50

100

.01

.1

1

10

50

0

200

400

600

800 1000 1200 1400

0

0.4

0.8

1.2

1.6

2.0

50,000

10,000

5,000

1,000

500

100

50

10

5

1

VDS=50V

VDS=20V

VDS=80V

I

D

= 100A

10

µS

10mS

100mS

DC

1mS

TJ =+150°C

TJ =+25°C

APT's devices are covered by one or more of the following U.S.patents: 4,895,810

5,045,903

5,089,434

5,182,234

5,019,522

5,262,336

5,256,583

4,748,103

5,283,202

5,231,474

5,434,095

5,528,058

31.5 (1.240)

31.7 (1.248)

Dimensions in Millimeters and (Inches)

7.8 (.307)

8.2 (.322)

30.1 (1.185)

30.3 (1.193)

38.0 (1.496)

38.2 (1.504)

14.9 (.587)

15.1 (.594)

11.8 (.463)

12.2 (.480)

8.9 (.350)

9.6 (.378)

Hex Nut M4

(4 places)

0.75 (.030)

0.85 (.033)

12.6 (.496)

12.8 (.504)

25.2 (0.992)

25.4 (1.000)

1.95 (.077)

2.14 (.084)

* Source

Drain

Gate

*

r = 4.0 (.157)

(2 places)

4.0 (.157)

4.2 (.165)

(2 places)

W=4.1 (.161)

W=4.3 (.169)

H=4.8 (.187)

H=4.9 (.193)

(4 places)

3.3 (.129)

3.6 (.143)

* Source

Source terminals are shorted

internally. Current handling

capability is equal for either

Source terminal.

ISOTOP

"UL Recognized" File No. E145592

Crss

Coss

Ciss

1,000

500

100

50

10

5

1

20

16

12

8

4

0

100

µS